Integrated circuit and method of semiconductor device fabrication

Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre...

Full description

Saved in:
Bibliographic Details
Main Authors SUN, CHIH-TING, LI, ZI-KUAN, CHANG, MENG-LIN, LO, TSENGIN, TSEN, YA-WEN, LIN, GENG-HE, CHANG, BO-SEN
Format Patent
LanguageChinese
English
Published 16.01.2018
Subjects
Online AccessGet full text

Cover

Loading…
Abstract Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.
AbstractList Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.
Author CHANG, MENG-LIN
CHANG, BO-SEN
LO, TSENGIN
LI, ZI-KUAN
LIN, GENG-HE
TSEN, YA-WEN
SUN, CHIH-TING
Author_xml – fullname: SUN, CHIH-TING
– fullname: LI, ZI-KUAN
– fullname: CHANG, MENG-LIN
– fullname: LO, TSENGIN
– fullname: TSEN, YA-WEN
– fullname: LIN, GENG-HE
– fullname: CHANG, BO-SEN
BookMark eNqNyr0KwkAMAOAbdPDvHeIDCNUiuhZRdC84lpjLacAm5S71-V18AKdv-eZhoqY8C81NnZ8ZnSOQZBrFATVCz_6yCJagcC9kGkdyyxD5I8SQ8JGF0MV0GaYJ34VXPxdhfTm3p-uGB-u4DEis7F1731XbY1VXh31T_3O-QBQz4g
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Physics
ExternalDocumentID TW201803075A
GroupedDBID EVB
ID FETCH-epo_espacenet_TW201803075A3
IEDL.DBID EVB
IngestDate Fri Aug 23 06:57:09 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language Chinese
English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_TW201803075A3
Notes Application Number: TW20176120937
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180116&DB=EPODOC&CC=TW&NR=201803075A
ParticipantIDs epo_espacenet_TW201803075A
PublicationCentury 2000
PublicationDate 20180116
PublicationDateYYYYMMDD 2018-01-16
PublicationDate_xml – month: 01
  year: 2018
  text: 20180116
  day: 16
PublicationDecade 2010
PublicationYear 2018
RelatedCompanies TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
RelatedCompanies_xml – name: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
Score 3.2458463
Snippet Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
Title Integrated circuit and method of semiconductor device fabrication
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180116&DB=EPODOC&locale=&CC=TW&NR=201803075A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR3LSsNAcKj1edNq0fpgBckt2DTbJB6KtElDFfpAou2tZDcJxkNSkhTBr3d2m1gvetxdGHaGnZ33DMBdKMQop5pqMM5Vyk2qPugsUDlFq4ej_tCOhEN_PDFGr_R50V3U4KOqhZF9Qj9lc0TkKI78Xsj_erV1YjkytzK_ZzFupY-u13OU0jrWLBFXUJxBbzibOlNbse2eN1cmL5szfM_d_g7sohptCm4Yvg1EVcrqt0hxj2FvhtCS4gRqX-8NOLSryWsNOBiXAe8G7MsMTZ7jZsmF-Sn0n6oeDwHhccbXcUH8JCCbadAkjUguUt7TRPRyTTMShOI7IJHPshK5M7h1h549UvFWyx8SLL35FgG9CfUkTcJzIKIwlekRWgVoqFGfWjrjHRa1jbYVmDrrXEDrbzit_w4v4UgshLNBM66gXmTr8BrFb8FuJN2-AZV3iVI
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR3LTsJAcIL4wJuiRPG1Jqa3xkKXggdioI8UpYWYKtwIu20jHlrSlpj49c6WIl70OpNMdiY7O-9ZgLtAmFFOG7LGOJcpb1P5QWW-zClGPRz9ByUUCX3H1exX-jRtTUvwsZmFyfeEfubLEVGjOOp7lr_Xy20Sy8h7K9N7tkBQ_Gh5XUMqouNGR9QVJKPfNccjY6RLut71JpL7ssbhfW71dmAXXey20AbzrS-mUpa_TYp1BHtjpBZlx1D6eq9CRd_8vFaFA6coeFdhP-_Q5CkCCy1MT6A32Ox48AlfJHy1yMg88sn6N2gShyQVLe9xJHa5xgnxA_EckHDOkoK5U7i1TE-3ZTzV7EcEM2-yZUCtQTmKo-AMiBhMZWqIUQEGanROOyrjTRYqmtLx2yprnkP9bzr1_5A3ULE9ZzgbDtznCzgUCJF4aGiXUM6SVXCFpjhj17kMvwEyGoxF
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Integrated+circuit+and+method+of+semiconductor+device+fabrication&rft.inventor=SUN%2C+CHIH-TING&rft.inventor=LI%2C+ZI-KUAN&rft.inventor=CHANG%2C+MENG-LIN&rft.inventor=LO%2C+TSENGIN&rft.inventor=TSEN%2C+YA-WEN&rft.inventor=LIN%2C+GENG-HE&rft.inventor=CHANG%2C+BO-SEN&rft.date=2018-01-16&rft.externalDBID=A&rft.externalDocID=TW201803075A