Sputtering target and method for producing sputtering target

• Main Authors: ZHANG, SHOU-BIN, KATO, SHINJI
• Format: Patent
• Language: Chinese; English
• Published: 01.10.2017
• Subjects: ALLOYS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; FERROUS OR NON-FERROUS ALLOYS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF ALLOYS OR NON-FERROUS METALS

A sputtering target of the present invention includes a base material and a target material which is formed on the surface of the base material. The target material has a composition with 8 atom% to 66 atom% of metal element M and a balance of Si and inevitable impurities. The target material has a metal M phase and a metal Si phase. Isum/ISi*100 which is the ratio between the peak integrated intensity ISi of (111) plane of metal Si and the total peak integrated intensities Isum of each silicide compound showed in MxSiy in X-ray diffraction is 10 % or less.