Deposition apparatus of capacitor and deposition method of dielectric layer using the same

Disclosed is a method of manufacturing a capacitor having a high dielectric constant, which prevents a surface of a dielectric layer from being deteriorated due to a vacuum break and prevents the quality of a dielectric layer from being degraded due to a physical stress occurring when a semiconducto...

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Bibliographic Details
Main Authors SEO, DONG-WON, KWAK, JAEAN, CHO, BYOUNG-HA
Format Patent
LanguageChinese
English
Published 16.05.2017
Subjects
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Summary:Disclosed is a method of manufacturing a capacitor having a high dielectric constant, which prevents a surface of a dielectric layer from being deteriorated due to a vacuum break and prevents the quality of a dielectric layer from being degraded due to a physical stress occurring when a semiconductor substrate is being loaded and unloaded.
Bibliography:Application Number: TW20165123719