Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

• Main Author: HIROCHI, YUKITOMO
• Format: Patent
• Language: Chinese; English
• Published: 01.03.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

In the present invention, the productivity of a processing apparatus including a plurality of process chambers is improved. There is provided a substrate processing apparatus including a plurality of process chambers, a process gas supply unit configured to supply a process gas into each of the plurality of process chambers, a purge gas supply unit configured to supply a purge gas into each of the plurality of process chambers, an exhaust unit configured to exhaust each of the plurality of process chambers and a control unit configured to control the process gas supply unit, the purge gas supply unit and the exhaust unit to supply the process gas into a first process chamber of the plurality of process chambers to which a substrate is transferred while supplying the purge gas into process chambers other than the first process chamber and exhausting the plurality of process chambers.