Wet activation of ruthenium containing liner/barrier

Methods and systems are provided for preparing a ruthenium containing liner/barrier for metal deposition, and are useful in the manufacture of integrated circuits. In accordance with one embodiment, a borohydride solution having a pH greater than 12 is mixed with DI water at the place of application...

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Bibliographic Details
Main Authors DORDI, YEZDI, DICTUSIES
Format Patent
LanguageChinese
English
Published 16.10.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods and systems are provided for preparing a ruthenium containing liner/barrier for metal deposition, and are useful in the manufacture of integrated circuits. In accordance with one embodiment, a borohydride solution having a pH greater than 12 is mixed with DI water at the place of application to form a pretreatment solution. The pretreatment solution is applied to reduce a ruthenium-containing surface of a substrate. Following reduction of the ruthenium containing surface, copper deposition may be initiated.
Bibliography:Application Number: TW20132143864