Texture etching solution composition and texture etching method of crystalline silicon wafers

Disclosed herein is an etching composition for texturing a crystalline silicon wafer, comprising, based on a total amount of the composition: (A) 0.1 to 20 wt% of an alkaline compound; (B) 0.1 to 50 wt% of a cyclic compound having a boiling point of 100 DEG C or more; (C) 0.00001 to 10 wt% of a sili...

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Bibliographic Details
Main Authors LIM, DAE-SUNG, HONG, HYUNG-PYO, LEE, JAE-YOUN
Format Patent
LanguageChinese
English
Published 16.05.2012
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Summary:Disclosed herein is an etching composition for texturing a crystalline silicon wafer, comprising, based on a total amount of the composition: (A) 0.1 to 20 wt% of an alkaline compound; (B) 0.1 to 50 wt% of a cyclic compound having a boiling point of 100 DEG C or more; (C) 0.00001 to 10 wt% of a silica-containing compound; and (D) residual water. The etching composition can maximize the absorbance of light of the surface of a crystalline silicon wafer.
Bibliography:Application Number: TW20110128913