Photodiode manufacturing method and photodiode

An n- type semiconductor substrate (1) is prepared, said substrate having a first main surface (1a) and a second main surface (1b) that oppose each other, and a p+ type semiconductor region (3) being formed on the first main surface (1a) side. By means of irradiation with pulsed laser light, irregul...

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Bibliographic Details
Main Authors SAKAMOTO, AKIRA, FUJII, YOSHIMARO, NAGANO, TERUMASA, YAMAMURA, KAZUHISA
Format Patent
LanguageChinese
English
Published 01.01.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An n- type semiconductor substrate (1) is prepared, said substrate having a first main surface (1a) and a second main surface (1b) that oppose each other, and a p+ type semiconductor region (3) being formed on the first main surface (1a) side. By means of irradiation with pulsed laser light, irregular recesses and projections (10) are formed in at least the region of the second main surface (1a) of the n- type semiconductor substrate (1) that opposes the p+ type semiconductor region (3). After the irregular recesses and projections (10) are formed, an accumulation layer (11) having a higher impurity concentration than that of the n- type semiconductor substrate (1) is formed on the second main surface (1b) side of the n- type semiconductor substrate (1). After the accumulation layer (11) is formed, the n- type semiconductor substrate (1) is heat-treated.
Bibliography:Application Number: TW201099105359