Method of forecasting and detecting polishing endpoint and the device thereof and real time film thickness monitoring method and the device thereof

• Main Authors: KITADE, KEITA, YOKOYAMA, TOSHIYUKI, FUJITA, TAKASHI
• Format: Patent
• Language: Chinese; English
• Published: 01.12.2008
• Subjects: BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; MEASURING; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS; PERFORMING OPERATIONS; PHYSICS; POLISHING; SEMICONDUCTOR DEVICES; TESTING; TRANSPORTING

An object of the present invention is to provide a method of forecasting and detecting a polishing endpoint and the device thereof and a real time film thickness monitoring method and the device thereof capable of suppressing a Joule heat loss to the minimum due to an eddy current, and precisely forecasting and detecting the polishing endpoint, and moreover, precisely calculating a remaining film amount to be removed and a polishing rate and the like on the spot so as to be able to accurately evaluate whether the predetermined conductive film is appropriately removed. To achieve the above described object, the present invention brings an inductor in a high frequency inductor type sensor close to the predetermined conductive film, and monitors a flux change induced in the predetermined conductive film by the flux formed by the inductor 36, and based on a flux change when a film thickness during the polishing becomes a film thickness corresponding to a skin depth decided with the material of the predetermined c