SOI device and method for manufacturing the same

• Main Authors: WU, CHU-LUN, LIN, JYI-TSONG
• Format: Patent
• Language: Chinese; English
• Published: 01.10.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a structure of Silicon-On-Insulator (SOI) MOSFET and the method for fabricating the same. The SOI MOSFET comprises a substrate, a buried oxide layer, a field oxide layer, a semiconductor conductive layer, a thin gate oxide layer, a gate poly layer, a second source and a seco...