Voltage follower and driving circuit using the same
A voltage follower and a driving circuit using the same. The voltage follower comprises a NMOS (N-type Metal-Oxide Semiconductor) and a PMOS (P-type Metal-Oxide Semiconductor). The drains of the NMOS and PMOS are connected to the VDD and GND, respectively. The bulks and the sources of the NMOS and P...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
01.12.2005
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Online Access | Get full text |
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Abstract | A voltage follower and a driving circuit using the same. The voltage follower comprises a NMOS (N-type Metal-Oxide Semiconductor) and a PMOS (P-type Metal-Oxide Semiconductor). The drains of the NMOS and PMOS are connected to the VDD and GND, respectively. The bulks and the sources of the NMOS and PMOS are connected together as an output terminal to output signal. The gates of the NMOS and PMOS are connected together and receive an input signal. Therefore, the voltage of the output signal will be clamped near the voltage of the input signal and the voltage follower will not consume DC power. |
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AbstractList | A voltage follower and a driving circuit using the same. The voltage follower comprises a NMOS (N-type Metal-Oxide Semiconductor) and a PMOS (P-type Metal-Oxide Semiconductor). The drains of the NMOS and PMOS are connected to the VDD and GND, respectively. The bulks and the sources of the NMOS and PMOS are connected together as an output terminal to output signal. The gates of the NMOS and PMOS are connected together and receive an input signal. Therefore, the voltage of the output signal will be clamped near the voltage of the input signal and the voltage follower will not consume DC power. |
Author | CHANG, KUEI-KAI LIN, KUN-ZONG |
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Snippet | A voltage follower and a driving circuit using the same. The voltage follower comprises a NMOS (N-type Metal-Oxide Semiconductor) and a PMOS (P-type... |
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Title | Voltage follower and driving circuit using the same |
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