ULTRAVIOLET (UV) RADIATION TREATMENT METHODS FOR SUBATMOSPHERIC CHEMICAL VAPOR DEPOSITION (SACVD) OF OZONE-TETRAETHOXYSILANE (O3-TEOS)

ULTRAVIOLET (UV) RADIATION TREATMENT METHODS FOR SUBATMOSPHERIC CHEMICAL VAPOR DEPOSITION (SACVD) OF OZONE-TETRAETHOXYSILANE (03-TEOS) Dielectric layers are formed on a substrate by performing Subatmospheric Chemical Vapor Deposition (SACVD) of ozone-tetraethoxysilane (03-TEOS) to form a layer of 03...

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Bibliographic Details
Main Authors HAMPP ROLAND, WIDODO JOHNNY, GUTMANN ALOIS, JAE-EUN PARK, SCHENK ANDRE, JUNG KIM JUN
Format Patent
LanguageEnglish
Published 26.11.2009
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Summary:ULTRAVIOLET (UV) RADIATION TREATMENT METHODS FOR SUBATMOSPHERIC CHEMICAL VAPOR DEPOSITION (SACVD) OF OZONE-TETRAETHOXYSILANE (03-TEOS) Dielectric layers are formed on a substrate by performing Subatmospheric Chemical Vapor Deposition (SACVD) of ozone-tetraethoxysilane (03-TEOS) to form a layer of 03-TEOS on the substrate, and treating the layer of 03-TEOS with ultraviolet (UV) radiation. The UV radiation treatment can increase the tensile stress in the 03-TEOS layer by reducing the amount of water in the layer. Moreover, the UV treatment may also reduce the amount of silanol in the 03-TEOS layer, which can also increase reliability of the device.
Bibliography:Application Number: SG20090067166