FILM FORMING METHOD AND ALUMINUM NITRIDE FILM FORMING METHOD FOR SEMICONDUCTOR APPARATUS

• Main Authors: GENG, Yujie, WANG, Jun, GUO, Bingliang, MA, Huaichao, DONG, Boyu
• Format: Patent
• Language: English
• Published: 28.12.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided are a film forming method of a semiconductor device and an aluminium nitride film forming method of a semiconductor device. The film forming method of a semiconductor device comprises performing multiple sputtering processes in sequence. Each sputtering process comprises the steps of: loading a substrate (31) into a chamber (21) and placing the substrate (31) on a bearing base (22); moving a shutter disk (24) to a position between a target (T) and the substrate (31); introducing inert gas into the chamber (21) to perform a surface modification process on the target (T); performing pre-sputtering to pretreat the surface of the target (T); removing the shutter disk (24) from the position between the target (T) and the substrate (31), and performing primary sputtering on the substrate (31) using the target (T), so as to form a thin film on the substrate (31); and removing the substrate (31) out of the chamber (21), the surface modification process of the sputtering process performed on the Nth batch of substrates and the surface modification process of the sputtering process performed on the (N+1)th batch of substrates having different process parameters, and N being a positive integer. The film forming method of a semiconductor device and the aluminium nitride film forming method of a semiconductor device can improve the quality of formed films and increase the thickness uniformity of the formed films.