SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Authors: ARAI, Yoshio, YONEYAMA, Hiroyuki, HORIGOME, Katsuhiko, SAIKI, Naoya
• Format: Patent
• Language: English
• Published: 28.12.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The semiconductor device manufacturing method according to the present invention comprises: a pre-treatment step for forming a groove from the front surface side of a semiconductor wafer or forming a modified region on the semiconductor wafer; a chip dicing step for grinding the semiconductor wafer from the rear surface side to dice the semiconductor wafer, along the groove or the modified region, into a plurality of chips; an attachment step for attaching, to the rear surfaces of the diced semiconductor wafer, the side of thermosetting protective coating formation films of supporter-provided protective coating formation films, in which the thermosetting protective coating formation films are provided on supporters; a thermosetting step for thermosetting, and converting into protective films, the thermosetting protective coating formation films attached to the semiconductor wafers; and a pickup step for picking up, after the thermosetting step, protective film-provided chips in which the protective films are laminated on the chips.