SEMICONDUCTOR DEVICE AND METHOD OF FORMING ULTRA HIGH DENSITY EMBEDDED SEMICONDUCTOR DIE PACKAGE
A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
29.11.2017
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Online Access | Get full text |
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Abstract | A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film. |
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AbstractList | A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film. |
Author | HSIAO, Yung Kuan FANG, Ching Meng PHUA, Yoke Hor LIM, See Chian TAN, Teck Tiong LIAO, Bartholomew |
Author_xml | – fullname: LIAO, Bartholomew – fullname: PHUA, Yoke Hor – fullname: TAN, Teck Tiong – fullname: HSIAO, Yung Kuan – fullname: LIM, See Chian – fullname: FANG, Ching Meng |
BookMark | eNqNzL0KwjAUQOEMOvj3DndwFVpbUMeYe5sETSJNKjrVInGStlDfHx2cnJzO8nGmbNR2bZywmyejhbNYieBKQDprQcAtgqGgHIIroHCl0VZCdQwlB6Wl-jjrdbgCmT0hEsLPRhOcuDhwSXM2fjTPIS6-nbFlQUGoVey7Og59c49tfNVepsk6STfJNs92F579yd7rWjZs |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | SG10201708439XA |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_SG10201708439XA3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 14:35:33 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_SG10201708439XA3 |
Notes | Application Number: SG20171008439X |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171129&DB=EPODOC&CC=SG&NR=10201708439XA |
ParticipantIDs | epo_espacenet_SG10201708439XA |
PublicationCentury | 2000 |
PublicationDate | 20171129 |
PublicationDateYYYYMMDD | 2017-11-29 |
PublicationDate_xml | – month: 11 year: 2017 text: 20171129 day: 29 |
PublicationDecade | 2010 |
PublicationYear | 2017 |
RelatedCompanies | STATS CHIPPAC PTE. LTD |
RelatedCompanies_xml | – name: STATS CHIPPAC PTE. LTD |
Score | 3.125501 |
Snippet | A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer... |
SourceID | epo |
SourceType | Open Access Repository |
Title | SEMICONDUCTOR DEVICE AND METHOD OF FORMING ULTRA HIGH DENSITY EMBEDDED SEMICONDUCTOR DIE PACKAGE |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171129&DB=EPODOC&locale=&CC=SG&NR=10201708439XA |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwhV3dT8IwEL8gGvVNUeMXpg9kb4sDBm4PxIy2-1C3ETYIPuFWRuKDg8iM_77XBfx60Le211zaS6_3u7Z3BWgkQsg8ZIbaNQQ6KLgq1ESfGWrWElmip5poZtJR9IOuO9LvJp1JBV42sTBlntD3MjkiapRAfS_K_Xr5dYjFyreVq-v0GZsWt3bcY8raO27eSPigsH6PD0IWUoXSXuQowRCxrqRqBtrfibUF2xJJy1T7fNyXgSnL71bFPoCdATLMi0OoZHkN9ujm87Ua7PrrO28srtVvdQRPkZRaGLARjcMhYXzsUU6sgBGfx27ISGgT9Op8L3DI6CEeWsT1HBf7BZEXPxLu9zljnJFfbDxOBha9txx-DA2bx9RVcajTT9FMI-fHxNonUM0XeXYKRDPnc1Ob6aaQP8OnwuxoqT4rER-CnLZxBvU_WZ3_Q7-AfVmTYXkt8xKqxetbVkf7XKRXpVQ_AHZwil8 |
link.rule.ids | 230,309,786,891,25594,76904 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwhV3dT8IwEL8gGvFNUeMX2geyt8UhA7YHYkbbfQjbCAyCT8jKSHxwEJnx3_e6gF8P-tb0mkt76fXu1_buAKozIWQeMkNtGgIBCu4KdabPDTW5E8lMjzVRSyRQ9IOmO9IfJo1JAV62sTB5ntD3PDkiapRAfc_y83r1dYnF8r-V69v4GbuW93bUZsoGHdda0n1QWKfN-yELqUJpe-gowQB9XUnVDLS_E2sHdluICmWqfT7uyMCU1XerYh_CXh8ZptkRFJK0DCW6Lb5Whn1_8-aNzY36rY_haSilFgZsRKNwQBgfe5QTK2DE55EbMhLaBFGd7wUOGfWigUVcz3FxXDD0okfC_Q5njDPyi43HSd-iXcvhJ1C1eURdFac6_RTNdOj8WFj9FIrpMk3OgGjmYmFqc90UsjJ8LMyGFuvz3ONDJ6dunEPlT1YX_9BvoORGfm_a84LuJRxIigzRuzOvoJi9viUVtNVZfJ1L-AMVPo1K |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SEMICONDUCTOR+DEVICE+AND+METHOD+OF+FORMING+ULTRA+HIGH+DENSITY+EMBEDDED+SEMICONDUCTOR+DIE+PACKAGE&rft.inventor=LIAO%2C+Bartholomew&rft.inventor=PHUA%2C+Yoke+Hor&rft.inventor=TAN%2C+Teck+Tiong&rft.inventor=HSIAO%2C+Yung+Kuan&rft.inventor=LIM%2C+See+Chian&rft.inventor=FANG%2C+Ching+Meng&rft.date=2017-11-29&rft.externalDBID=A&rft.externalDocID=SG10201708439XA |