Startsubstrat för halvledarteknologi med substratgenomgåendekopplingar och en metod för tillverkning därav

A substrate-through electrical connection (10) for connecting components on opposite sides of a substrate, and a method for making same. The connection includes a substrate-through via made from substrate material (10′). There is a trench (11) provided surrounding the via, the walls of the trench be...

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Bibliographic Details
Main Author ULF ERLESAND
Format Patent
LanguageSwedish
Published 04.02.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A substrate-through electrical connection (10) for connecting components on opposite sides of a substrate, and a method for making same. The connection includes a substrate-through via made from substrate material (10′). There is a trench (11) provided surrounding the via, the walls of the trench being coated with a layer of insulating material (12) and the trench (11) is filled with conductive or semi-conductive material (13). A doping region (15) for threshold voltage adjustment is provided in the via material in the surface of the inner trench wall between insulating material (12) and the material (10′) in the via. There are contacts (17′, 17″) to the via on opposite sides of the substrate, and a contact (18) to the conductive material (13) in the trench (11) so as to enable the application of a voltage to the conductive material (13).
Bibliography:Application Number: SE20110050356