HIGH POWER DOUBLE TRANSIENT OVERVOLTAGE SUPPRESSOR AND PROCESS FOR PRODUCING THE SAME
The invention relates to a transient overvoltage suppressing device with undefined polarization at a voltage of less than 8 V and to a process for producing the same. According to the invention, the device has a symmetrical U-I characteristic and comprises a single-crystal silicon wafer (2.3) with a...
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Main Authors | , |
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Format | Patent |
Language | English Romanian |
Published |
28.03.2008
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Subjects | |
Online Access | Get full text |
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