MANUFACTURING PROCESS OF COMPOUND SEMICONDUCTOR DEVICE USING ALAS PROTECTION LAYER

The compound semiconductor device, which forms electric channel by activating a gallium arsenide substrate(10) implanted with ions, is composed of (A) forming an aluminum arsenide layer(30) and gallium arsenide layer(40) on a gallium arsenide substrate(10) where an ion implanted layer(20) is formed...

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Bibliographic Details
Main Authors LEE, JUNG - HEE, PARK, SUNG - HO, KANG, JIN - YOUNG
Format Patent
LanguageEnglish
Korean
Published 23.03.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The compound semiconductor device, which forms electric channel by activating a gallium arsenide substrate(10) implanted with ions, is composed of (A) forming an aluminum arsenide layer(30) and gallium arsenide layer(40) on a gallium arsenide substrate(10) where an ion implanted layer(20) is formed by epitaxial method, (B) forming a silica layer(50) on the gallium arsenide layer(40) by PECVD method, (C) heat-treating the substrate(10) at elevated temperature, and (D) etching the silica layer(50), gallium arsenide layer(40) and aluminum arsenide layer(30). When the silica layer(50) is etched, the buffer oxide film etchant is used.
Bibliography:Application Number: KR19920023357