SEMICONDUCTOR MEMORY DEVICE
A main row decoder for driving main word lines in a main memory cell array includes partial decoders the number of which is equal to the number of the main word lines. Each partial decoder includes a NAND gate for receiving row address signals, an inverter for driving a corresponding main word line...
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| Main Authors | , , |
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| Format | Patent |
| Language | English Korean |
| Published |
08.07.1994
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| Edition | 5 |
| Subjects | |
| Online Access | Get full text |
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| Abstract | A main row decoder for driving main word lines in a main memory cell array includes partial decoders the number of which is equal to the number of the main word lines. Each partial decoder includes a NAND gate for receiving row address signals, an inverter for driving a corresponding main word line in response to an output from the NAND gate, a fuse element connected between the output terminal of the NAND gate and the input terminal of the inverter, and a MOS transistor connected between the input terminal of the inverter and a power supply voltage. |
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| AbstractList | A main row decoder for driving main word lines in a main memory cell array includes partial decoders the number of which is equal to the number of the main word lines. Each partial decoder includes a NAND gate for receiving row address signals, an inverter for driving a corresponding main word line in response to an output from the NAND gate, a fuse element connected between the output terminal of the NAND gate and the input terminal of the inverter, and a MOS transistor connected between the input terminal of the inverter and a power supply voltage. |
| Author | HAMANO, TAKAHIRO ISOBE, MITSUO MATSUI, MASATAKA 3 |
| Author_xml | – fullname: MATSUI, MASATAKA 3 – fullname: ISOBE, MITSUO – fullname: HAMANO, TAKAHIRO |
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| Notes | Application Number: KR19890004078 |
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| RelatedCompanies | TOSHIBA CO., LTD TOSHIBA MICROCOMPUTER ENGINEERING CO., LTD |
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| Snippet | A main row decoder for driving main word lines in a main memory cell array includes partial decoders the number of which is equal to the number of the main... |
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| Title | SEMICONDUCTOR MEMORY DEVICE |
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