EUV PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF

• Main Authors: LEE WEI HAO, KUO CHIA TUNG, HSU PEI CHENG, LEE HSIN CHANG
• Format: Patent
• Language: English; Korean
• Published: 05.02.2024
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

극자외선(EUV) 포토마스크용 펠리클을　제조하는　방법에서, SP2　탄소의 멤브레인이　형성되고, 멤브레인의 표면 특성을 변경하기 위해 멤브레인 상에 처리가 수행되며, 그 처리 후, 멤브레인 위에 커버층이 형성된다. 　 In a method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask, a membrane of Sp2 carbon is formed, a treatment is performed on the membrane to change a surfac...