EUV PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF

극자외선(EUV) 포토마스크용 펠리클을　제조하는　방법에서, SP2　탄소의 멤브레인이　형성되고, 멤브레인의 표면 특성을 변경하기 위해 멤브레인 상에 처리가 수행되며, 그 처리 후, 멤브레인 위에 커버층이 형성된다. 　 In a method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask, a membrane of Sp2 carbon is formed, a treatment is performed on the membrane to change a surfac...

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Bibliographic Details
Main Authors LEE WEI HAO, KUO CHIA TUNG, HSU PEI CHENG, LEE HSIN CHANG
Format Patent
LanguageEnglish
Korean
Published 05.02.2024
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:극자외선(EUV) 포토마스크용 펠리클을　제조하는　방법에서, SP2　탄소의 멤브레인이　형성되고, 멤브레인의 표면 특성을 변경하기 위해 멤브레인 상에 처리가 수행되며, 그 처리 후, 멤브레인 위에 커버층이 형성된다. 　 In a method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask, a membrane of Sp2 carbon is formed, a treatment is performed on the membrane to change a surface property of the membrane, and after the treatment, a cover layer is formed over the membrane.
Bibliography:Application Number: KR20230097620