A SEMICONDUCTOR DEVICE

A semiconductor element is equipped with a substrate comprising a memory cell area, a peripheral circuit area, and a boundary area between the memory cell area and the peripheral circuit area. First active patterns extending in a diagonal direction are equipped in the memory cell area. A silicon dam...

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Main Authors CHO YOUNG SEUNG, RYU HO IN, JUNG HYEON OK, SHIN DONG HWA
Format Patent
LanguageEnglish
Korean
Published 04.08.2023
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Abstract A semiconductor element is equipped with a substrate comprising a memory cell area, a peripheral circuit area, and a boundary area between the memory cell area and the peripheral circuit area. First active patterns extending in a diagonal direction are equipped in the memory cell area. A silicon dam structure is equipped in the boundary area. The silicon dam structure comprises a silicon dam pattern comprising trench lines of the diagonal direction and a dam element separation pattern within the trench line. Therefore, the present invention is capable of reducing defects. 반도체 소자는 메모리 셀 영역, 주변 회로 영역 및 상기 메모리 셀 영역 및 주변 회로 영역 사이의 경계 영역을 포함하는 기판이 구비된다. 상기 메모리 셀 영역에, 사선 방향으로 연장되는 제1 액티브 패턴들이 구비된다. 상기 경계 영역에 실리콘 댐 구조물이 구비된다. 상기 실리콘 댐 구조물은 상기 사선 방향의 트렌치 라인들을 포함하는 실리콘 댐 패턴 및 상기 트렌치 라인 내의 댐 소자 분리 패턴을 포함한다.
AbstractList A semiconductor element is equipped with a substrate comprising a memory cell area, a peripheral circuit area, and a boundary area between the memory cell area and the peripheral circuit area. First active patterns extending in a diagonal direction are equipped in the memory cell area. A silicon dam structure is equipped in the boundary area. The silicon dam structure comprises a silicon dam pattern comprising trench lines of the diagonal direction and a dam element separation pattern within the trench line. Therefore, the present invention is capable of reducing defects. 반도체 소자는 메모리 셀 영역, 주변 회로 영역 및 상기 메모리 셀 영역 및 주변 회로 영역 사이의 경계 영역을 포함하는 기판이 구비된다. 상기 메모리 셀 영역에, 사선 방향으로 연장되는 제1 액티브 패턴들이 구비된다. 상기 경계 영역에 실리콘 댐 구조물이 구비된다. 상기 실리콘 댐 구조물은 상기 사선 방향의 트렌치 라인들을 포함하는 실리콘 댐 패턴 및 상기 트렌치 라인 내의 댐 소자 분리 패턴을 포함한다.
Author JUNG HYEON OK
RYU HO IN
CHO YOUNG SEUNG
SHIN DONG HWA
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Title A SEMICONDUCTOR DEVICE
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