RESISTOR MATERIAL RESISTOR ELEMENT AND METHOD OF MANUFACTURING THE RESISTOR ELEMENT

Provided is a material that enables both characteristics possessing a small temperature coefficient of resistance (TCR), while having high resistivity, to be compatible at a high level. Provided is a resistance material (1) having by mixing a plurality of crystalline phases (2) having a positive res...

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Main Authors ITO NOZOMI, ABE KENICHIRO, SHIRAISHI NOBUHITO, KUNIMUNE YORINOBU
Format Patent
LanguageEnglish
Korean
Published 17.04.2023
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Abstract Provided is a material that enables both characteristics possessing a small temperature coefficient of resistance (TCR), while having high resistivity, to be compatible at a high level. Provided is a resistance material (1) having by mixing a plurality of crystalline phases (2) having a positive resistance temperature coefficient, and an amorphous phase (3) having a negative temperature coefficient of resistance and a higher resistivity than that of the crystalline phase (2). In addition, provided is a manufacturing method for the resistance material that enables a resistance element having a resistance film comprising the resistance material (1) and an amorphous material having the negative temperature coefficient of resistance to be deposited, and enables thereof to be anneal-processed. [과제] 높은 저항률을 가지면서, 작은 저항 온도 계수(TCR)를 보유한다고 하는 양쪽 특성을 높은 레벨에서 양립한 재료를 제공한다. [해결 수단] 정의 저항 온도 계수를 갖는 복수의 결정상(2)과, 부의 저항 온도 계수를 갖고, 결정상(2)보다도 비저항이 높은 비정질상(3)을 혼재하여 갖는 저항 재료(1)를 제공한다. 또한, 이 저항 재료(1)를 포함하는 저항막을 갖는 저항 소자 및 부의 저항 온도 계수를 갖는 비정질 재료를 성막하고, 이것을 어닐 처리하여 상기 저항 소자로 하는 제조 방법을 제공한다.
AbstractList Provided is a material that enables both characteristics possessing a small temperature coefficient of resistance (TCR), while having high resistivity, to be compatible at a high level. Provided is a resistance material (1) having by mixing a plurality of crystalline phases (2) having a positive resistance temperature coefficient, and an amorphous phase (3) having a negative temperature coefficient of resistance and a higher resistivity than that of the crystalline phase (2). In addition, provided is a manufacturing method for the resistance material that enables a resistance element having a resistance film comprising the resistance material (1) and an amorphous material having the negative temperature coefficient of resistance to be deposited, and enables thereof to be anneal-processed. [과제] 높은 저항률을 가지면서, 작은 저항 온도 계수(TCR)를 보유한다고 하는 양쪽 특성을 높은 레벨에서 양립한 재료를 제공한다. [해결 수단] 정의 저항 온도 계수를 갖는 복수의 결정상(2)과, 부의 저항 온도 계수를 갖고, 결정상(2)보다도 비저항이 높은 비정질상(3)을 혼재하여 갖는 저항 재료(1)를 제공한다. 또한, 이 저항 재료(1)를 포함하는 저항막을 갖는 저항 소자 및 부의 저항 온도 계수를 갖는 비정질 재료를 성막하고, 이것을 어닐 처리하여 상기 저항 소자로 하는 제조 방법을 제공한다.
Author SHIRAISHI NOBUHITO
ITO NOZOMI
ABE KENICHIRO
KUNIMUNE YORINOBU
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Snippet Provided is a material that enables both characteristics possessing a small temperature coefficient of resistance (TCR), while having high resistivity, to be...
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SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
RESISTORS
SEMICONDUCTOR DEVICES
Title RESISTOR MATERIAL RESISTOR ELEMENT AND METHOD OF MANUFACTURING THE RESISTOR ELEMENT
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