RESISTOR MATERIAL RESISTOR ELEMENT AND METHOD OF MANUFACTURING THE RESISTOR ELEMENT
Provided is a material that enables both characteristics possessing a small temperature coefficient of resistance (TCR), while having high resistivity, to be compatible at a high level. Provided is a resistance material (1) having by mixing a plurality of crystalline phases (2) having a positive res...
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Format | Patent |
Language | English Korean |
Published |
17.04.2023
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Abstract | Provided is a material that enables both characteristics possessing a small temperature coefficient of resistance (TCR), while having high resistivity, to be compatible at a high level. Provided is a resistance material (1) having by mixing a plurality of crystalline phases (2) having a positive resistance temperature coefficient, and an amorphous phase (3) having a negative temperature coefficient of resistance and a higher resistivity than that of the crystalline phase (2). In addition, provided is a manufacturing method for the resistance material that enables a resistance element having a resistance film comprising the resistance material (1) and an amorphous material having the negative temperature coefficient of resistance to be deposited, and enables thereof to be anneal-processed.
[과제] 높은 저항률을 가지면서, 작은 저항 온도 계수(TCR)를 보유한다고 하는 양쪽 특성을 높은 레벨에서 양립한 재료를 제공한다. [해결 수단] 정의 저항 온도 계수를 갖는 복수의 결정상(2)과, 부의 저항 온도 계수를 갖고, 결정상(2)보다도 비저항이 높은 비정질상(3)을 혼재하여 갖는 저항 재료(1)를 제공한다. 또한, 이 저항 재료(1)를 포함하는 저항막을 갖는 저항 소자 및 부의 저항 온도 계수를 갖는 비정질 재료를 성막하고, 이것을 어닐 처리하여 상기 저항 소자로 하는 제조 방법을 제공한다. |
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AbstractList | Provided is a material that enables both characteristics possessing a small temperature coefficient of resistance (TCR), while having high resistivity, to be compatible at a high level. Provided is a resistance material (1) having by mixing a plurality of crystalline phases (2) having a positive resistance temperature coefficient, and an amorphous phase (3) having a negative temperature coefficient of resistance and a higher resistivity than that of the crystalline phase (2). In addition, provided is a manufacturing method for the resistance material that enables a resistance element having a resistance film comprising the resistance material (1) and an amorphous material having the negative temperature coefficient of resistance to be deposited, and enables thereof to be anneal-processed.
[과제] 높은 저항률을 가지면서, 작은 저항 온도 계수(TCR)를 보유한다고 하는 양쪽 특성을 높은 레벨에서 양립한 재료를 제공한다. [해결 수단] 정의 저항 온도 계수를 갖는 복수의 결정상(2)과, 부의 저항 온도 계수를 갖고, 결정상(2)보다도 비저항이 높은 비정질상(3)을 혼재하여 갖는 저항 재료(1)를 제공한다. 또한, 이 저항 재료(1)를 포함하는 저항막을 갖는 저항 소자 및 부의 저항 온도 계수를 갖는 비정질 재료를 성막하고, 이것을 어닐 처리하여 상기 저항 소자로 하는 제조 방법을 제공한다. |
Author | SHIRAISHI NOBUHITO ITO NOZOMI ABE KENICHIRO KUNIMUNE YORINOBU |
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DocumentTitleAlternate | 저항 재료, 저항 소자 및 저항 소자의 제조 방법 |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY RESISTORS SEMICONDUCTOR DEVICES |
Title | RESISTOR MATERIAL RESISTOR ELEMENT AND METHOD OF MANUFACTURING THE RESISTOR ELEMENT |
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