SUBSTRATE PROCESSING APPARATUS METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE METHOD OF PROCESSING SUBSTRATE AND GAS INJECTOR
Provided is a technique capable of equalizing a supply amount of a gas in the longitudinal direction of a tube of a gas sprayer in a processing container. A substrate processing apparatus comprises: the processing container; a substrate holding tool disposed in the processing container, and arrangin...
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Format | Patent |
Language | English Korean |
Published |
28.02.2023
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Abstract | Provided is a technique capable of equalizing a supply amount of a gas in the longitudinal direction of a tube of a gas sprayer in a processing container. A substrate processing apparatus comprises: the processing container; a substrate holding tool disposed in the processing container, and arranging and holding a plurality of substrates; and the gas sprayer having a tube extending along the direction in which the plurality of substrates are arranged and supplying the gas into the processing container. The gas sprayer includes: at least one first spray hole provided in a section in which the plurality of substrates are arranged along the longitudinal direction of the tube to supply the gas; and a plurality of second spray holes, at a tip of the tube, provided so as to open obliquely with respect to the longitudinal direction, with an area smaller than a flow path cross-sectional area of the tube.
본 발명은, 처리 용기 내의 가스 분사기의 관의 길이 방향에 있어서의 가스의 공급량을 균등화하는 것이 가능한 기술을 제공한다. 기판 처리 장치는, 처리 용기와, 처리 용기 내에 배치되어, 복수의 기판을 배열해서 보유 지지하는 기판 보유 지지구와, 복수의 기판이 배열되는 방향을 따라 신장되는 관을 갖고, 처리 용기 내에 가스를 공급하는 가스 분사기를 구비하고, 가스 분사기는, 관의 길이 방향을 따라, 복수의 기판이 배열되는 구간에 마련되어, 가스를 공급하는 적어도 하나의 제1 분사 구멍과, 관의 선단에 있어서, 관의 유로 단면적보다도 작은 면적으로, 길이 방향에 대하여 비스듬히 개구되도록 마련되는 복수의 제2 분사 구멍을 갖는다. |
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AbstractList | Provided is a technique capable of equalizing a supply amount of a gas in the longitudinal direction of a tube of a gas sprayer in a processing container. A substrate processing apparatus comprises: the processing container; a substrate holding tool disposed in the processing container, and arranging and holding a plurality of substrates; and the gas sprayer having a tube extending along the direction in which the plurality of substrates are arranged and supplying the gas into the processing container. The gas sprayer includes: at least one first spray hole provided in a section in which the plurality of substrates are arranged along the longitudinal direction of the tube to supply the gas; and a plurality of second spray holes, at a tip of the tube, provided so as to open obliquely with respect to the longitudinal direction, with an area smaller than a flow path cross-sectional area of the tube.
본 발명은, 처리 용기 내의 가스 분사기의 관의 길이 방향에 있어서의 가스의 공급량을 균등화하는 것이 가능한 기술을 제공한다. 기판 처리 장치는, 처리 용기와, 처리 용기 내에 배치되어, 복수의 기판을 배열해서 보유 지지하는 기판 보유 지지구와, 복수의 기판이 배열되는 방향을 따라 신장되는 관을 갖고, 처리 용기 내에 가스를 공급하는 가스 분사기를 구비하고, 가스 분사기는, 관의 길이 방향을 따라, 복수의 기판이 배열되는 구간에 마련되어, 가스를 공급하는 적어도 하나의 제1 분사 구멍과, 관의 선단에 있어서, 관의 유로 단면적보다도 작은 면적으로, 길이 방향에 대하여 비스듬히 개구되도록 마련되는 복수의 제2 분사 구멍을 갖는다. |
Author | TANAKA MADOKA KAGAYA TORU NAGATOMI YOSHIMASA |
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DocumentTitleAlternate | 기판 처리 장치, 반도체 장치의 제조 방법, 기판 처리 방법 및 가스 분사기 |
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Snippet | Provided is a technique capable of equalizing a supply amount of a gas in the longitudinal direction of a tube of a gas sprayer in a processing container. A... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | SUBSTRATE PROCESSING APPARATUS METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE METHOD OF PROCESSING SUBSTRATE AND GAS INJECTOR |
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