ETCHING METHOD
In etching using a catalyst, the present invention makes it difficult for processing defects to occur. An etching method of an embodiment comprises: preparing a plurality of openings or one or more openings for defining a plurality of island-shaped units in a part for covering a first area on a subs...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English Korean |
Published |
27.09.2022
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | In etching using a catalyst, the present invention makes it difficult for processing defects to occur. An etching method of an embodiment comprises: preparing a plurality of openings or one or more openings for defining a plurality of island-shaped units in a part for covering a first area on a substrate (10) having first and second areas on a main surface of one side, and allowing a part for covering the second area to form a first layer (90) which is a continuous film; forming a catalyst layer (80) including precious metal on a part exposed in the plurality of opening or the one or more openings of the main surface by using a plating method; covering a part adjacent to a boundary between the first and second areas of the catalyst layer (80) and forming a second layer (95) for exposing a part separated from the boundary of the catalyst layer (80); and etching the substrate (10) with an etching agent including an oxidizing agent and hydrogen fluoride in presence of the catalyst layer (80) and the second layer (95).
본 발명은, 촉매를 사용한 에칭에 있어서, 가공 불량이 생기기 어렵게 한다. 실시 형태의 에칭 방법은, 한쪽 주면에 제1 및 제2 영역을 갖는 기판(10) 상에, 상기 제1 영역을 피복한 부분에 복수의 개구가 또는 복수의 섬상부를 규정하는 하나 이상의 개구가 마련되고, 상기 제2 영역을 피복한 부분은 연속막인 제1층(90)을 형성하는 것과, 귀금속을 포함한 촉매층(80)을 도금법에 의해, 상기 주면 중 상기 복수의 개구 또는 상기 하나 이상의 개구 내에서 노출된 부분 위에 형성하는 것과, 상기 촉매층(80) 중 상기 제1 및 제2 영역간의 경계에 인접한 부분을 피복하고, 상기 촉매층(80) 중 상기 경계로부터 이격된 부분을 노출시킨 제2층(95)을 형성하는 것과, 상기 촉매층(80) 및 상기 제2층(95)의 존재 하에, 산화제와 불화수소를 포함한 에칭제로 상기 기판(10)을 에칭하는 것을 포함한다. |
---|---|
AbstractList | In etching using a catalyst, the present invention makes it difficult for processing defects to occur. An etching method of an embodiment comprises: preparing a plurality of openings or one or more openings for defining a plurality of island-shaped units in a part for covering a first area on a substrate (10) having first and second areas on a main surface of one side, and allowing a part for covering the second area to form a first layer (90) which is a continuous film; forming a catalyst layer (80) including precious metal on a part exposed in the plurality of opening or the one or more openings of the main surface by using a plating method; covering a part adjacent to a boundary between the first and second areas of the catalyst layer (80) and forming a second layer (95) for exposing a part separated from the boundary of the catalyst layer (80); and etching the substrate (10) with an etching agent including an oxidizing agent and hydrogen fluoride in presence of the catalyst layer (80) and the second layer (95).
본 발명은, 촉매를 사용한 에칭에 있어서, 가공 불량이 생기기 어렵게 한다. 실시 형태의 에칭 방법은, 한쪽 주면에 제1 및 제2 영역을 갖는 기판(10) 상에, 상기 제1 영역을 피복한 부분에 복수의 개구가 또는 복수의 섬상부를 규정하는 하나 이상의 개구가 마련되고, 상기 제2 영역을 피복한 부분은 연속막인 제1층(90)을 형성하는 것과, 귀금속을 포함한 촉매층(80)을 도금법에 의해, 상기 주면 중 상기 복수의 개구 또는 상기 하나 이상의 개구 내에서 노출된 부분 위에 형성하는 것과, 상기 촉매층(80) 중 상기 제1 및 제2 영역간의 경계에 인접한 부분을 피복하고, 상기 촉매층(80) 중 상기 경계로부터 이격된 부분을 노출시킨 제2층(95)을 형성하는 것과, 상기 촉매층(80) 및 상기 제2층(95)의 존재 하에, 산화제와 불화수소를 포함한 에칭제로 상기 기판(10)을 에칭하는 것을 포함한다. |
Author | HIGUCHI KAZUHITO TAJIMA TAKAYUKI OBATA SUSUMU SANO MITSUO |
Author_xml | – fullname: HIGUCHI KAZUHITO – fullname: OBATA SUSUMU – fullname: TAJIMA TAKAYUKI – fullname: SANO MITSUO |
BookMark | eNrjYmDJy89L5WTgcw1x9vD0c1fwdQ3x8HfhYWBNS8wpTuWF0twMym4gFbqpBfnxqcUFicmpeakl8d5BRgZGRgaGxgampuaOxsSpAgDy4B9o |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 에칭 방법 |
ExternalDocumentID | KR20220130557A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_KR20220130557A3 |
IEDL.DBID | EVB |
IngestDate | Fri Oct 04 05:00:53 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English Korean |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_KR20220130557A3 |
Notes | Application Number: KR20210110813 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220927&DB=EPODOC&CC=KR&NR=20220130557A |
ParticipantIDs | epo_espacenet_KR20220130557A |
PublicationCentury | 2000 |
PublicationDate | 20220927 |
PublicationDateYYYYMMDD | 2022-09-27 |
PublicationDate_xml | – month: 09 year: 2022 text: 20220927 day: 27 |
PublicationDecade | 2020 |
PublicationYear | 2022 |
RelatedCompanies | KABUSHIKI KAISHA TOSHIBA |
RelatedCompanies_xml | – name: KABUSHIKI KAISHA TOSHIBA |
Score | 3.4033732 |
Snippet | In etching using a catalyst, the present invention makes it difficult for processing defects to occur. An etching method of an embodiment comprises: preparing... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | ETCHING METHOD |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220927&DB=EPODOC&locale=&CC=KR&NR=20220130557A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMUoxMU5MMjLRNU1LM9A1SUuz1LVIAXZWko2SUoyNkyySjVJAHUVfPzOPUBOvCNMIJoYc2F4Y8Dmh5eDDEYE5KhmY30vA5XUBYhDLBby2slg_KRMolG_vFmLrogbtHRsZGVgamau5ONm6Bvi7-DurOTvbegep-QVB5AxBx1uZOzIzsIIa0qCT9l3DnED7UgqQKxU3QQa2AKB5eSVCDEzZ-cIMnM6wu9eEGTh8oVPeQCY09xWLMPC5hjiDRpcUfF1DPPxdRBmU3UAiukCD4-H-iPcOQnaFsRgDC7CHnyrBoGCWZGZhmmqRnGicDKwxkxKTgJ0ek6RE47RUEyOD1CRTSQYZfCZJ4ZeWZuACcUGLHIzMZRhYSopKU2WBNWlJkhw4AADXsHP0 |
link.rule.ids | 230,309,786,891,25594,76904 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMUoxMU5MMjLRNU1LM9A1SUuz1LVIAXZWko2SUoyNkyySjVJAHUVfPzOPUBOvCNMIJoYc2F4Y8Dmh5eDDEYE5KhmY30vA5XUBYhDLBby2slg_KRMolG_vFmLrogbtHRsZGVgamau5ONm6Bvi7-DurOTvbegep-QVB5AxBx1uZOzIzsJoDO4Wgk_Zdw5xA-1IKkCsVN0EGtgCgeXklQgxM2fnCDJzOsLvXhBk4fKFT3kAmNPcVizDwuYY4g0aXFHxdQzz8XUQZlN1AIrpAg-Ph_oj3DkJ2hbEYAwuwh58qwaBglmRmYZpqkZxonAysMZMSk4CdHpOkROO0VBMjg9QkU0kGGXwmSeGXlmfg9Ajx9Yn38fTzlmbgAkmBFjwYmcswsJQUlabKAmvVkiQ5cGAAAGkKdt8 |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=ETCHING+METHOD&rft.inventor=HIGUCHI+KAZUHITO&rft.inventor=OBATA+SUSUMU&rft.inventor=TAJIMA+TAKAYUKI&rft.inventor=SANO+MITSUO&rft.date=2022-09-27&rft.externalDBID=A&rft.externalDocID=KR20220130557A |