Single crystal semiconductor structure and method of manufacturing the same

• Main Authors: HAN, JOO HUN, MATIAS VLADIMIR, CHOI, JUN HEE
• Format: Patent
• Language: English; Korean
• Published: 15.09.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A single crystal semiconductor structure and a manufacturing method thereof are disclosed. The disclosed single crystal semiconductor structure comprises: an amorphous substrate; a strain compensation layer disposed under the amorphous substrate; a lattice matched layer disposed above the amorphous...