에칭 방법 및 에칭 장치

• Main Authors: SHINDO NAOKI, YOU GEN, TACHIBANA MITSUHIRO, TODA SATOSHI, SUZUKI HARUNA
• Format: Patent
• Language: Korean
• Published: 04.08.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

본 발명의 에칭 방법은, 적어도 몰리브덴막 또는 텅스텐막과 실리콘 함유물을 갖고, 몰리브덴막 또는 텅스텐막이 노출된 상태의 기판을 챔버 내에 마련하는 공정과, 챔버 내에 산화 가스와, 에칭 가스로서의 육불화물 가스를 공급하여 몰리브덴막 또는 텅스텐막을 실리콘 함유물에 대하여 선택적으로 에칭하는 공정을 갖는다. An etching method includes: providing, within a chamber, a substrate that includes at least a silicon-containing material and a molybdenum film or a tungsten film which is in an exposed state, and selectively etching the molybdenum film or the tungsten film relative to the silicon-containing material by supplying, into the chamber, an oxidation gas and a hexafluoride gas as an etching gas.