A Manufacturing Method of Carbon Thin Film on Dielectric Substrate for Semiconductor Manufacturing

• Main Authors: LIM JIN MOOK, PARK SE HEE, LIM MYUNG YONG, CHO YIK HAENG, CHOI JUNG SIK
• Format: Patent
• Language: English; Korean
• Published: 03.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention can provide a manufacturing method of a carbon thin film, which reforms a surface characteristic of a substrate made of SiO_2 or SiN by using gas containing sulfur (S) or a silicon (Si) precursor containing the sulfur (S), thereby improving an adsorption characteristic of a car...