A Manufacturing Method of Carbon Thin Film on Dielectric Substrate for Semiconductor Manufacturing

• Main Authors: LIM JIN MOOK, PARK SE HEE, LIM MYUNG YONG, CHO YIK HAENG, CHOI JUNG SIK
• Format: Patent
• Language: English; Korean
• Published: 03.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention can provide a manufacturing method of a carbon thin film, which reforms a surface characteristic of a substrate made of SiO_2 or SiN by using gas containing sulfur (S) or a silicon (Si) precursor containing the sulfur (S), thereby improving an adsorption characteristic of a carbon atom formed on the substrate made of SiO_2 or SiN, linearly increasing thickness of the carbon thin film deposited in a following subsequent process in units of atomic layers. According to the method, a carbon thin film element used for a semiconductor process can be manufactured at relatively low temperature and cost. 본 발명은 황(S)이 포함된 가스 혹은 황(S)이 포함된 실리콘(Si) 전구체(Precursor)를 사용하여 SiO2 혹은 SiN 등의 기재의 표면 특성을 개질함으로써, SiO2 혹은 SiN 기재 상에 형성되는 탄소 원자의 흡착 특성을 향상시키고, 이후 후속 공정에서 증착되는 탄소 박막의 두께를 원자층 단위로 선형적으로 증가시킬 수 있는 탄소 박막의 제조 방법을 제공할 수 있으며, 이러한 방법을 통해 반도체 공정에 사용되는 탄소 박막 소자를 보다 저온 및 저비용으로 제조할 수 있는 효과가 있다.