CHARGE SENSITIVE AMPLIFIER AND A RADIATION SENSOR HAVING THE SAME
The present invention relates to a charge amplifier capable of minimizing fluctuations of a signal voltage of an output signal by applying a bias direct current to a gate of a feedback transistor, and a radiation sensor including the same. In accordance with the present invention, through the charge...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English Korean |
Published |
06.01.2022
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The present invention relates to a charge amplifier capable of minimizing fluctuations of a signal voltage of an output signal by applying a bias direct current to a gate of a feedback transistor, and a radiation sensor including the same. In accordance with the present invention, through the charge amplifier and the radiation sensor including the same, a current, which is formed by mirroring a current bias circuit designed to be insensitive to a PVT fluctuation, is applied to a gate of a feedback transistor to minimize fluctuations of a signal voltage of an output signal of the charge amplifier, and also, a constant current supplied through a bandgap reference (BGR) circuit is used to charge the signal voltage up to the level of a common voltage (VCOM), which can lead to an advantage of enabling high-speed detection by reducing fluctuations in charging time.
본 발명은 피드백 트랜지스터의 게이트에 바이어스 직류전류를 인가함으로써 출력 신호의 신호 전압의 변동을 최소화할 수 있도록 한 전하증폭기 및 이를 포함하는 방사선 센서에 관한 것이다. 본 발명에 따른 전하증폭기 및 이를 포함하는 방사선 센서에 의하면, 피드백 트랜지스터의 게이트에 PVT 변동에 둔감하도록 설계된 전류 바이어스 회로를 미러링(mirroring)하여 형성된 전류를 인가하여 전하증폭기 출력 신호의 신호 전압(signal voltage)의 변동을 최소화할 수 있으며, 밴드갭 기준 (Bandgap Reference:BGR) 회로를 통해 공급된 정전류를 이용하여 신호 전압을 공통전압(VCOM)의 레벨까지 충전하므로 충전 시간의 변동을 줄여 고속 감지가 가능한 장점이 있다. |
---|---|
Bibliography: | Application Number: KR20200080408 |