SEMICONDUCTOR DEVICE WITH VARYING NUMBERS OF CHANNEL LAYERS AND METHOD OF FABRICATION THEREOF

• Main Authors: CHUNG CHENG TING, CHENG KUAN LUN
• Format: Patent
• Language: English; Korean
• Published: 08.12.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method comprises: a step of providing a structure having a front surface and a rear surface, wherein the structure comprises a substrate, two or more semiconductor channel layers, over the substrate, which is connecting a first source/drain (S/D) feature and a second S/D feature, and a gate struct...