TVS tvs diode circuit with high energy dissipation and linear capacitance
A TVS circuit has a first diode having a cathode coupled to a first terminal and an anode coupled to a first node. A second diode has an anode coupled to a second node and a cathode coupled to a third node. A third diode is connected between the first node and the second node. A fourth diode is conn...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English Korean |
Published |
20.08.2021
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | A TVS circuit has a first diode having a cathode coupled to a first terminal and an anode coupled to a first node. A second diode has an anode coupled to a second node and a cathode coupled to a third node. A third diode is connected between the first node and the second node. A fourth diode is connected between the first node and the third node. A fifth diode is connected between the second node and a second terminal. A sixth diode is connected between the second terminal and the third node. A seventh diode may be connected between the second terminal and an intermediate node between the fifth diode and the sixth diode. The first diode is disposed on a first semiconductor die and the second diode is disposed on a second semiconductor die. Optionally, the first diode and the second diode are disposed on a single semiconductor die.
캐소드가 제 1 단자에 결합되고 애노드가 제 1 노드에 결합된 제 1 다이오드를 갖는 TVS 회로. 제 2 다이오드는 제 2 노드에 결합된 애노드와 제 3 노드에 결합된 캐소드를 갖는다. 제 3 다이오드는 제 1 노드와 제 2 노드 사이에 연결된다. 제 4 다이오드는 제 1 노드와 제 3 노드 사이에 연결된다. 제 5 다이오드는 제 2 노드와 제 2 단자 사이에 연결된다. 제 6 다이오드는 제 2 단자와 제 3 노드 사이에 연결된다. 제 7 다이오드는 제 2 단자와 제 5 다이오드와 제 6 다이오드 사이의 중간 노드 사이에 연결될 수 있다. 제 1 다이오드는 제 1 반도체 다이 상에 배치되고, 제 2 다이오드는 제 2 반도체 다이 상에 배치된다. 선택적으로, 제 1 다이오드 및 제 2 다이오드는 단일 반도체 다이 상에 배치된다. |
---|---|
AbstractList | A TVS circuit has a first diode having a cathode coupled to a first terminal and an anode coupled to a first node. A second diode has an anode coupled to a second node and a cathode coupled to a third node. A third diode is connected between the first node and the second node. A fourth diode is connected between the first node and the third node. A fifth diode is connected between the second node and a second terminal. A sixth diode is connected between the second terminal and the third node. A seventh diode may be connected between the second terminal and an intermediate node between the fifth diode and the sixth diode. The first diode is disposed on a first semiconductor die and the second diode is disposed on a second semiconductor die. Optionally, the first diode and the second diode are disposed on a single semiconductor die.
캐소드가 제 1 단자에 결합되고 애노드가 제 1 노드에 결합된 제 1 다이오드를 갖는 TVS 회로. 제 2 다이오드는 제 2 노드에 결합된 애노드와 제 3 노드에 결합된 캐소드를 갖는다. 제 3 다이오드는 제 1 노드와 제 2 노드 사이에 연결된다. 제 4 다이오드는 제 1 노드와 제 3 노드 사이에 연결된다. 제 5 다이오드는 제 2 노드와 제 2 단자 사이에 연결된다. 제 6 다이오드는 제 2 단자와 제 3 노드 사이에 연결된다. 제 7 다이오드는 제 2 단자와 제 5 다이오드와 제 6 다이오드 사이의 중간 노드 사이에 연결될 수 있다. 제 1 다이오드는 제 1 반도체 다이 상에 배치되고, 제 2 다이오드는 제 2 반도체 다이 상에 배치된다. 선택적으로, 제 1 다이오드 및 제 2 다이오드는 단일 반도체 다이 상에 배치된다. |
Author | LIPING REN ALLEN WILLIAM RUSSELL |
Author_xml | – fullname: LIPING REN – fullname: ALLEN WILLIAM RUSSELL |
BookMark | eNqNjLsKAjEQAFNo4esfFqyF3HmCrYii2OlheyzJelk4NiGJin9vCj_AaooZZqpG4oUm6tzeb5BfCSx7S2A4midneHN24Lh3QEKx_xSdEgfM7AVQLAwshBEMBjScUQzN1fiBQ6LFjzO1PB7a_WlFwXeUSldWubtca11XutL1ttns1v9VX6l9NvU |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 고 에너지 분산 및 선형 커패시턴스를 갖는 TVS 다이오드 회로 |
ExternalDocumentID | KR20210102845A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_KR20210102845A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 14:21:18 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English Korean |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_KR20210102845A3 |
Notes | Application Number: KR20210013118 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210820&DB=EPODOC&CC=KR&NR=20210102845A |
ParticipantIDs | epo_espacenet_KR20210102845A |
PublicationCentury | 2000 |
PublicationDate | 20210820 |
PublicationDateYYYYMMDD | 2021-08-20 |
PublicationDate_xml | – month: 08 year: 2021 text: 20210820 day: 20 |
PublicationDecade | 2020 |
PublicationYear | 2021 |
RelatedCompanies | SEMTECH CORPORATION |
RelatedCompanies_xml | – name: SEMTECH CORPORATION |
Score | 3.3279889 |
Snippet | A TVS circuit has a first diode having a cathode coupled to a first terminal and an anode coupled to a first node. A second diode has an anode coupled to a... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS GENERATION SEMICONDUCTOR DEVICES |
Title | TVS tvs diode circuit with high energy dissipation and linear capacitance |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210820&DB=EPODOC&locale=&CC=KR&NR=20210102845A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_mFPVNp-LHlIDSt2K3pV32UMS1K9OxD-YcextpkkJR2tFm-u-b1E73tLckByG5cPldLrlfAB46bcbVvmebDmeRiSm3TRpRblokjBhxGpEgOnd4OHL67_h1YS8q8LnJhSl4Qr8LckRlUUzZuyz269V_EMsv3lbmj2GsmtKnYOb6Rnk6VucXhWiG33V7k7E_9gzPcwdTYzT9lWkwxfbzHuxrR1oz7ffmXZ2XstoGleAEDiaqv0SeQuUjrcGRt_l7rQaHw_LKWxVL68vP4GU2f0PyK0c8TrlALM7YOpZIh1KRph1GokjkQ_qOvXwpjWjCkfYkaYaYwkUWS73M53Af9GZe31RjWv6pYDmYbk-gdQHVJE3EJaAObtJmg9rUUX4BwSRstAm1qMCWwCwMoyuo7-rperf4Bo51VcdQm1YdqjJbi1sFwjK8K3T3A6pwi6c |
link.rule.ids | 230,309,786,891,25594,76904 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8gGvFNUeMHahPN3hbH7MZ4IEY2FpDP4CS8ka7tkkWzkVH037edQ3nireklTXvN3e8-eleAh2aDMqn3LN1mNNIxYZZOIsJ0wwkj6tj1iDuqdng4srvv-HVuzUvwuamFyfuEfufNEaVEUSnvItfXy_8glpe_rVw9hrGcSp_9oOVphXcs_ReJaJrXbnUmY2_saq7b6k-10fSXpsAUWy97sN-QTqHqtN-ZtVVdynIbVPxjOJjI9RJxAqWPtAoVd_P3WhUOh0XKWw4L6VudQi-YvSHxtUIsThlHNM7oOhZIhVKRajuMeF7Ih1SOvXgpjUjCkLIkSYaoxEUaC3XNZ3DvdwK3q8s9Lf5YsOhPtw_wdA7lJE34BaAmNolZJxaxpV3gYCesNxxiEI4NjmkYRpdQ27XS1W7yHVS6wXCwGPRG_Ws4UiQVTzWNGpRFtuY3EpBFeJvz8QdY5I6S |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=TVS+tvs+diode+circuit+with+high+energy+dissipation+and+linear+capacitance&rft.inventor=LIPING+REN&rft.inventor=ALLEN+WILLIAM+RUSSELL&rft.date=2021-08-20&rft.externalDBID=A&rft.externalDocID=KR20210102845A |