TERAHERTZ SIGNAL SOURCE CIRCUIT WITH RTD-PAIR TOPOLOGY

Disclosed is a terahertz signal source circuit using a resonant tunneling diode pair structure. The terahertz signal source circuit according to one embodiment comprises: an inductor with one end connected to a node and the other end connected to the ground; a first resonant tunneling diode with one...

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Bibliographic Details
Main Author YANG KYOUNG HOON
Format Patent
LanguageEnglish
Korean
Published 10.06.2021
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Summary:Disclosed is a terahertz signal source circuit using a resonant tunneling diode pair structure. The terahertz signal source circuit according to one embodiment comprises: an inductor with one end connected to a node and the other end connected to the ground; a first resonant tunneling diode with one end connected to the node; and a second resonant tunneling diode with one end connected to the node, wherein the first resonant tunneling diode and the second resonant tunneling diode are connected in a pair structure through the node. Therefore, the present invention is capable of providing a technology to improve an output performance of the terahertz signal source. 공명 터널링 다이오드 쌍구조를 이용한 테라헤르츠 신호원 회로가 개시된다. 일 실시예에 따른 테라헤르츠 신호원 회로는 일단이 노드에 접속하고 타단이 접지에 접속하는 인덕터와, 일단이 상기 노드에 접속하는 제1 공명 터널링 다이오드와, 일단이 상기 노드에 접속하는 제2 공명 터널링 다이오드를 포함하고, 상기 제1 공명 터널링 다이오드와 상기 제2 공명 터널링 다이오드는 상기 노드를 통해 쌍 구조로 접속된다.
Bibliography:Application Number: KR20190158468