ALD PROCESSES FOR LOW LEAKAGE CURRENT AND LOW EQUIVALENT OXIDE THICKNESS BiTaO FILMS

The present invention relates to an amorphous metal oxide with high dielectric constant (k>=40) and a low leakage current (<=10^-6 A/cm^2 at equivalent oxide thickness below 0.6 nm) comprising an oxide of two or more compatible metals selected from a group consisting of bismuth, tantalum, niob...

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Main Authors JANG WOOSUNG, CHEN PHILIP S. H, GUO DINGKAI, LI WEIMIN, HENDRIX BRYAN C
Format Patent
LanguageEnglish
Korean
Published 25.05.2021
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Abstract The present invention relates to an amorphous metal oxide with high dielectric constant (k>=40) and a low leakage current (<=10^-6 A/cm^2 at equivalent oxide thickness below 0.6 nm) comprising an oxide of two or more compatible metals selected from a group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide metal. The metal oxide of this type can be formed by allowing a relative ratio of the constituent metal to change over a thickness of such oxides, thereby improving their stability. The metal oxide can be readily manufactured by the disclosed atomic layer deposition process to provide metal oxide dielectric materials useful for DRAM and other microelectronic devices. 본 발명은 비스무트, 탄탈, 니오브, 바륨, 스트론튬, 칼슘, 마그네슘, 티탄, 지르코늄, 하프늄, 주석 및 란탄계 금속으로 이루어진 군으로부터 선택되는 둘 이상의 상용가능한 금속의 산화물을 포함하는, 유전 상수가 높고(k≥40) 누설 전류가 낮은(0.6nm 이하의 등가 산화물 두께에서 ≤10-6A/cm2) 비결정질 금속 산화물에 관한 것이다. 이러한 유형의 금속 산화물은 구성 금속의 상대적인 비가 이러한 산화물의 두께에 걸쳐 변화하도록 하여 형성됨으로써 이들의 안정성을 향상시킬 수 있다. 개시된 원자 층 침착 공정에 의해 금속 산화물을 용이하게 제조하여, DRAM 및 다른 미소전자 장치에 유용하게 사용되는 금속 산화물 유전 물질을 제공할 수 있다.
AbstractList The present invention relates to an amorphous metal oxide with high dielectric constant (k>=40) and a low leakage current (<=10^-6 A/cm^2 at equivalent oxide thickness below 0.6 nm) comprising an oxide of two or more compatible metals selected from a group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide metal. The metal oxide of this type can be formed by allowing a relative ratio of the constituent metal to change over a thickness of such oxides, thereby improving their stability. The metal oxide can be readily manufactured by the disclosed atomic layer deposition process to provide metal oxide dielectric materials useful for DRAM and other microelectronic devices. 본 발명은 비스무트, 탄탈, 니오브, 바륨, 스트론튬, 칼슘, 마그네슘, 티탄, 지르코늄, 하프늄, 주석 및 란탄계 금속으로 이루어진 군으로부터 선택되는 둘 이상의 상용가능한 금속의 산화물을 포함하는, 유전 상수가 높고(k≥40) 누설 전류가 낮은(0.6nm 이하의 등가 산화물 두께에서 ≤10-6A/cm2) 비결정질 금속 산화물에 관한 것이다. 이러한 유형의 금속 산화물은 구성 금속의 상대적인 비가 이러한 산화물의 두께에 걸쳐 변화하도록 하여 형성됨으로써 이들의 안정성을 향상시킬 수 있다. 개시된 원자 층 침착 공정에 의해 금속 산화물을 용이하게 제조하여, DRAM 및 다른 미소전자 장치에 유용하게 사용되는 금속 산화물 유전 물질을 제공할 수 있다.
Author HENDRIX BRYAN C
CHEN PHILIP S. H
LI WEIMIN
JANG WOOSUNG
GUO DINGKAI
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DocumentTitleAlternate 누설 전류가 낮고 등가 산화물 두께가 낮은 산화탈륨비스무트 필름을 제조하기 위한 원자층 증착 방법
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Snippet The present invention relates to an amorphous metal oxide with high dielectric constant (k>=40) and a low leakage current (<=10^-6 A/cm^2 at equivalent oxide...
SourceID epo
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SubjectTerms BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Title ALD PROCESSES FOR LOW LEAKAGE CURRENT AND LOW EQUIVALENT OXIDE THICKNESS BiTaO FILMS
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