ALD PROCESSES FOR LOW LEAKAGE CURRENT AND LOW EQUIVALENT OXIDE THICKNESS BiTaO FILMS
The present invention relates to an amorphous metal oxide with high dielectric constant (k>=40) and a low leakage current (<=10^-6 A/cm^2 at equivalent oxide thickness below 0.6 nm) comprising an oxide of two or more compatible metals selected from a group consisting of bismuth, tantalum, niob...
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Format | Patent |
Language | English Korean |
Published |
25.05.2021
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Abstract | The present invention relates to an amorphous metal oxide with high dielectric constant (k>=40) and a low leakage current (<=10^-6 A/cm^2 at equivalent oxide thickness below 0.6 nm) comprising an oxide of two or more compatible metals selected from a group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide metal. The metal oxide of this type can be formed by allowing a relative ratio of the constituent metal to change over a thickness of such oxides, thereby improving their stability. The metal oxide can be readily manufactured by the disclosed atomic layer deposition process to provide metal oxide dielectric materials useful for DRAM and other microelectronic devices.
본 발명은 비스무트, 탄탈, 니오브, 바륨, 스트론튬, 칼슘, 마그네슘, 티탄, 지르코늄, 하프늄, 주석 및 란탄계 금속으로 이루어진 군으로부터 선택되는 둘 이상의 상용가능한 금속의 산화물을 포함하는, 유전 상수가 높고(k≥40) 누설 전류가 낮은(0.6nm 이하의 등가 산화물 두께에서 ≤10-6A/cm2) 비결정질 금속 산화물에 관한 것이다. 이러한 유형의 금속 산화물은 구성 금속의 상대적인 비가 이러한 산화물의 두께에 걸쳐 변화하도록 하여 형성됨으로써 이들의 안정성을 향상시킬 수 있다. 개시된 원자 층 침착 공정에 의해 금속 산화물을 용이하게 제조하여, DRAM 및 다른 미소전자 장치에 유용하게 사용되는 금속 산화물 유전 물질을 제공할 수 있다. |
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AbstractList | The present invention relates to an amorphous metal oxide with high dielectric constant (k>=40) and a low leakage current (<=10^-6 A/cm^2 at equivalent oxide thickness below 0.6 nm) comprising an oxide of two or more compatible metals selected from a group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide metal. The metal oxide of this type can be formed by allowing a relative ratio of the constituent metal to change over a thickness of such oxides, thereby improving their stability. The metal oxide can be readily manufactured by the disclosed atomic layer deposition process to provide metal oxide dielectric materials useful for DRAM and other microelectronic devices.
본 발명은 비스무트, 탄탈, 니오브, 바륨, 스트론튬, 칼슘, 마그네슘, 티탄, 지르코늄, 하프늄, 주석 및 란탄계 금속으로 이루어진 군으로부터 선택되는 둘 이상의 상용가능한 금속의 산화물을 포함하는, 유전 상수가 높고(k≥40) 누설 전류가 낮은(0.6nm 이하의 등가 산화물 두께에서 ≤10-6A/cm2) 비결정질 금속 산화물에 관한 것이다. 이러한 유형의 금속 산화물은 구성 금속의 상대적인 비가 이러한 산화물의 두께에 걸쳐 변화하도록 하여 형성됨으로써 이들의 안정성을 향상시킬 수 있다. 개시된 원자 층 침착 공정에 의해 금속 산화물을 용이하게 제조하여, DRAM 및 다른 미소전자 장치에 유용하게 사용되는 금속 산화물 유전 물질을 제공할 수 있다. |
Author | HENDRIX BRYAN C CHEN PHILIP S. H LI WEIMIN JANG WOOSUNG GUO DINGKAI |
Author_xml | – fullname: JANG WOOSUNG – fullname: CHEN PHILIP S. H – fullname: GUO DINGKAI – fullname: LI WEIMIN – fullname: HENDRIX BRYAN C |
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DocumentTitleAlternate | 누설 전류가 낮고 등가 산화물 두께가 낮은 산화탈륨비스무트 필름을 제조하기 위한 원자층 증착 방법 |
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Snippet | The present invention relates to an amorphous metal oxide with high dielectric constant (k>=40) and a low leakage current (<=10^-6 A/cm^2 at equivalent oxide... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | ALD PROCESSES FOR LOW LEAKAGE CURRENT AND LOW EQUIVALENT OXIDE THICKNESS BiTaO FILMS |
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