METHOD OF DEPOSITING METAL NITRIDE THIN FILMS

• Main Authors: LEE GEUN SU, SHIN CHEOL HEE, PARK GIL JAE, HONG JONG TAI
• Format: Patent
• Language: English; Korean
• Published: 11.03.2021
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

According to one embodiment of the present invention, a method for forming a metal nitride thin film comprises: a deposition step of supplying a metal precursor to a substrate to be selectively deposited on a surface of the substrate; a halogen processing step of supplying halogen gas to the substrate to form a metal halogen compound on the surface of the substrate; and a nitrification step of supplying a nitrogen source to the substrate to react with the metal halogen compound and form metal nitride. 본 발명의 일 실시예에 의하면, 금속 질화물 박막의 형성 방법은, 기판에 금속 전구체를 공급하여 상기 기판의 표면에 선택적으로 증착시키는 증착 단계; 상기 기판에 할로젠 가스를 공급하여 상기 기판의 표면에 금속 할로젠 화합물을 형성하는 할로젠 처리 단계; 그리고 상기 기판에 질소 소스를 공급하여 상기 금속 할로젠 화합물과 반응시키고 금속 질화물을 형성하는 질화 단계를 포함한다.