VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

The present invention relates to a vertical memory device, which comprises: a channel formed on a substrate, and extending in a vertical direction perpendicular to the upper surface of the substrate; a charge storage structure formed on an outer sidewall of the channel, and including a tunnel insula...

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Bibliographic Details
Main Authors AN KYONG WON, SON YOUNG SEON, KIM BIO, YUN JU MI, KIM YU JIN, NAM PHIL OUK, JANG WOO JIN
Format Patent
LanguageEnglish
Korean
Published 09.02.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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