표면 처리 동박, 동장 적층판 및 프린트 배선판

• Main Authors: MIYAMOTO NOBUAKI, MIKI ATSUSHI
• Format: Patent
• Language: Korean
• Published: 24.11.2020
• Subjects: APPARATUS THEREFOR; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CHEMISTRY; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROFORMING; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; METALLURGY; PERFORMING OPERATIONS; PRINTED CIRCUITS; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS; TRANSPORTING

동박(2)과, 동박(2)의 한쪽 면에 형성된 제1 표면 처리층(3)을 갖는 표면 처리 동박(1)이다. 이 표면 처리 동박(1)의 제1 표면 처리층(3)은, XPS의 뎁스 프로파일에 있어서, 스퍼터링레이트 2.5㎚/분(SiO2 환산)으로 1분 스퍼터링을 행하였을 때의 C, N, O, Zn, Cr, Ni, Co, Si 및 Cu의 원소의 합계량에 대한 Ni 농도가 0.1 내지 15.0atm％이다. 또한, 동장 적층판(10)은, 표면 처리 동박(1)과, 표면 처리 동박(1)의 제1 표면 처리층(3)에 접착된 절연 기재(11)를 구비한다. A surface treated copper foil 1 includes a copper foil 2, and a first surface treatment layer 3 formed on one surface of the copper foil 2. The first surface treatment layer 3 of the surface treated copper foil 1 has a Ni concentration of 0.1 to 15.0 atm% based on the total amount of elements of C, N, O, Zn, Cr, Ni, Co, Si, and Cu, in an XPS depth profile obtained by performing sputtering at a sputtering rate of 2.5 nm/min (in terms of SiO2) for 1 minute. A copper clad laminate 10 includes the surface treated copper foil 1 and an insulating substrate 11 adhered to the first surface treatment layer 3 of the surface treated copper foil 1.