Tin compound tin precursor compound for forming a tin-containing layer and methods of forming a thin layer using the same

• Main Authors: LEE SANG ICK, CHO YOUNJOUNG, KIM YOUNSOO, LIM JAESOON, CHAE WON MOOK, RYU SEUNG MIN, CHO JUN HEE, KIM MYONG WOON
• Format: Patent
• Language: English; Korean
• Published: 03.08.2020
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A tin compound according to the present invention is represented by chemical formula 1, and is used as a tin precursor compound for forming a tin-containing layer. Each of R1, R2, R3, R4, R5, R6, and R7 is hydrogen, a linear alkyl group having 1 to 4 carbon atoms, or a branched alkyl group having 1 to 4 carbon atoms. 본 발명에 따른 주석 화합물은 화학식1로 표시되고, 주석 함유막의 형성을 위한 주석 전구체 화합물로 이용된다. [화학식1]R1, R2, R3, R4, R5, R6, 및 R7의 각각은 수소, 탄소수 1 내지 4의 선형 알킬기, 또는 탄소수 1 내지 4의 분지형 알킬기이다.