THIN FILM TRANSISTOR PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR PANEL
Provided is a thin film transistor substrate, a display device including the same and a manufacturing method of a thin film transistor substrate. The thin film transistor substrate with reduced trap density comprises: a substrate; a buffer layer disposed on the substrate; and a thin film transistor...
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Format | Patent |
Language | English Korean |
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01.07.2020
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Abstract | Provided is a thin film transistor substrate, a display device including the same and a manufacturing method of a thin film transistor substrate. The thin film transistor substrate with reduced trap density comprises: a substrate; a buffer layer disposed on the substrate; and a thin film transistor disposed on the buffer layer. The buffer layer includes: a first inorganic buffer layer disposed on one surface of the substrate; and an inorganic fluorine buffer layer disposed on the first inorganic buffer layer and containing 0.5 to 2 at% of fluorine. The thin film transistor includes a semiconductor layer disposed on the inorganic fluorine buffer layer.
박막 트랜지스터 기판, 이를 포함하는 표시 장치 및 박막 트랜지스터 기판의 제조 방법이 제공된다. 박막 트랜지스터 기판은 기판, 기판 상에 배치된 버퍼층, 및 버퍼층 상에 배치된 박막 트랜지스터를 포함하되, 버퍼층은 기판의 일면에 배치된 제1 무기 버퍼층, 및 제1 무기 버퍼층 상에 배치되고, 0.5at% 내지 2at%의 불소를 함유하는 무기 불소 버퍼층을 포함하고, 박막 트랜지스터는 무기 불소 버퍼층 상에 배치된 반도체층을 포함한다. |
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AbstractList | Provided is a thin film transistor substrate, a display device including the same and a manufacturing method of a thin film transistor substrate. The thin film transistor substrate with reduced trap density comprises: a substrate; a buffer layer disposed on the substrate; and a thin film transistor disposed on the buffer layer. The buffer layer includes: a first inorganic buffer layer disposed on one surface of the substrate; and an inorganic fluorine buffer layer disposed on the first inorganic buffer layer and containing 0.5 to 2 at% of fluorine. The thin film transistor includes a semiconductor layer disposed on the inorganic fluorine buffer layer.
박막 트랜지스터 기판, 이를 포함하는 표시 장치 및 박막 트랜지스터 기판의 제조 방법이 제공된다. 박막 트랜지스터 기판은 기판, 기판 상에 배치된 버퍼층, 및 버퍼층 상에 배치된 박막 트랜지스터를 포함하되, 버퍼층은 기판의 일면에 배치된 제1 무기 버퍼층, 및 제1 무기 버퍼층 상에 배치되고, 0.5at% 내지 2at%의 불소를 함유하는 무기 불소 버퍼층을 포함하고, 박막 트랜지스터는 무기 불소 버퍼층 상에 배치된 반도체층을 포함한다. |
Author | HWANG JIN HO KIM BYEONG BEOM HA HEON SIK |
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DocumentTitleAlternate | 박막 트랜지스터 기판, 이를 포함하는 표시 장치 및 박막 트랜지스터 기판의 제조 방법 |
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Snippet | Provided is a thin film transistor substrate, a display device including the same and a manufacturing method of a thin film transistor substrate. The thin film... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | THIN FILM TRANSISTOR PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR PANEL |
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