METHODS FOR DEPOSITING A BORON DOPED SILICON GERMANIUM FILM

• Main Author: KOHEN DAVID
• Format: Patent
• Language: English; Korean
• Published: 18.05.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method for depositing a boron doped silicon germanium (Si_(1-x)Ge_x) film is disclosed. The method may include the following steps of: providing a substrate into a reaction chamber; heating the substrate to a deposition temperature; allowing a silicon precursor, a germanium precursor, and a halide gas to flow into the reaction chamber through a first gas injector; allowing a boron dopant precursor to flow into the reaction chamber through a second gas injector independent from the first gas injector; contacting the substrate to the silicon precursor, the germanium precursor, the halide gas and the boron dopant precursor; and depositing the boron doped silicon germanium (Si_(1-x)Ge_x) film over a surface of the substrate. 붕소 도핑된 실리콘 게르마늄(SiGe) 막을 증착하는 방법을 개시한다. 방법은, 기판을 반응 챔버 내에 제공하는 단계; 기판을 증착 온도로 가열하는 단계; 제1 가스 인젝터를 통해 실리콘 전구체, 게르마늄 전구체, 및 할로겐화물 가스를 반응 챔버 내에 흐르게 하는 단계; 제1 가스 인젝터와 독립적인 제2 가스 인젝터를 통해 붕소 도펀트 전구체를 반응 챔버 내에 흐르게 하는 단계; 실리콘 전구체, 게르마늄 전구체, 할로겐화물 가스 및 붕소 도펀트 전구체와 기판을 접촉시키는 단계; 및 기판 표면 위로 붕소 도핑된 실리콘 게르마늄(SiGe) 막을 증착하는 단계를 포함할 수 있다.