Semiconductor device
The present invention relates to a semiconductor device with improved reliability. According to an embodiment of the present invention, the semiconductor device comprises: a gate electrode disposed on a substrate; a source/drain pattern disposed on the substrate of one side of the gate electrode; an...
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| Main Authors | , , , , , |
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| Format | Patent |
| Language | English Korean |
| Published |
24.04.2020
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| Subjects | |
| Online Access | Get full text |
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| Abstract | The present invention relates to a semiconductor device with improved reliability. According to an embodiment of the present invention, the semiconductor device comprises: a gate electrode disposed on a substrate; a source/drain pattern disposed on the substrate of one side of the gate electrode; and a gate contact plug disposed on the gate electrode. The gate contact plug comprises: a first gate contact part; and a second gate contact part protruding vertically from an upper surface of the first gate contact part, wherein the upper width of the first gate contact part can be greater than the lower width of the second gate contact part.
본 발명의 실시예에 따른 반도체 소자는 기판 상에 배치된 게이트 전극, 상기 게이트 전극의 일측의 상기 기판 상에 배치된 소오스/드레인 패턴 및 상기 게이트 전극 상에 배치되는 게이트 콘택 플러그를 포함하되, 상기 게이트 콘택 플러그는, 제 1 게이트 콘택 부분 및 상기 제 1 게이트 콘택 부분의 상면으로부터 수직 방향으로 돌출된 제 2 게이트 콘택 부분을 포함하고, 상기 제 1 게이트 콘택 부분의 상부 폭은 상기 제 2 게이트 콘택 부분의 하부 폭보다 클 수 있다. |
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| AbstractList | The present invention relates to a semiconductor device with improved reliability. According to an embodiment of the present invention, the semiconductor device comprises: a gate electrode disposed on a substrate; a source/drain pattern disposed on the substrate of one side of the gate electrode; and a gate contact plug disposed on the gate electrode. The gate contact plug comprises: a first gate contact part; and a second gate contact part protruding vertically from an upper surface of the first gate contact part, wherein the upper width of the first gate contact part can be greater than the lower width of the second gate contact part.
본 발명의 실시예에 따른 반도체 소자는 기판 상에 배치된 게이트 전극, 상기 게이트 전극의 일측의 상기 기판 상에 배치된 소오스/드레인 패턴 및 상기 게이트 전극 상에 배치되는 게이트 콘택 플러그를 포함하되, 상기 게이트 콘택 플러그는, 제 1 게이트 콘택 부분 및 상기 제 1 게이트 콘택 부분의 상면으로부터 수직 방향으로 돌출된 제 2 게이트 콘택 부분을 포함하고, 상기 제 1 게이트 콘택 부분의 상부 폭은 상기 제 2 게이트 콘택 부분의 하부 폭보다 클 수 있다. |
| Author | LEE DOOHYUN ROH YEONGCHANG SONG HYUN SEUNG SHIN HEONJONG YOU SORA JEONG YONGSIK |
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| Snippet | The present invention relates to a semiconductor device with improved reliability. According to an embodiment of the present invention, the semiconductor... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Semiconductor device |
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