Variable resistance memory Device and method of forming the same

• Main Authors: KIM JONGUK, CHOI DONGSUNG, KIM BYONGJU, KO YOUNG MIN, JUNG JAEHO
• Format: Patent
• Language: English; Korean
• Published: 17.04.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to embodiments of the present invention, a method of manufacturing a variable resistance memory device comprises the steps of: forming an array of memory cells on a substrate, each memory cell including a variable resistance structure and a switching element; and forming a sidewall insulat...