TRANSISTOR LAYOUT AND SIZING FOR HIGH SPEED APPLICATIONS

• Main Authors: LIAW JHON JHY, LIN JIEFENG JEFF, YU DIAN SHEG, YANG HSIAO LAN, LIN CHIH YUNG
• Format: Patent
• Language: English; Korean
• Published: 06.04.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A first type of a semiconductor device comprises a first fin structure extending in a first direction, a first gate, and a first slot contact disposed on the first fin structure. The first gate extends in a second direction and has a first gate dimension measured in the first direction. The first sl...