CAPACITOR

According to an embodiment of the present invention, provided is a capacitor which comprises: an active layer; a gate insulating layer formed on the active layer; a gate electrode formed on the gate insulating layer; an interlayer insulating film formed on the gate electrode; and a first electrode f...

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Main Authors JIN GUANG HAI, PARK SE HUN, CHOI JAE BEOM, CHO JAE SEOL
Format Patent
LanguageEnglish
Korean
Published 31.03.2020
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Abstract According to an embodiment of the present invention, provided is a capacitor which comprises: an active layer; a gate insulating layer formed on the active layer; a gate electrode formed on the gate insulating layer; an interlayer insulating film formed on the gate electrode; and a first electrode formed on the interlayer insulating film and connected to the active layer through at least one contact hole. 본 발명의 실시 예에 따른 커패시터는 액티브 층, 상기 액티브 층 위에 형성된 게이트 절연층, 상기 게이트 절연층 위에 형성된 게이트 전극, 상기 게이트 전극위에 형성된 층간 절연막, 및 상기 층간 절연막 위에 형성되어 있고 적어도 하나의 컨택홀을 통해 상기 액티브 층에 연결되어 있는 제1 전극을 포함한다.
AbstractList According to an embodiment of the present invention, provided is a capacitor which comprises: an active layer; a gate insulating layer formed on the active layer; a gate electrode formed on the gate insulating layer; an interlayer insulating film formed on the gate electrode; and a first electrode formed on the interlayer insulating film and connected to the active layer through at least one contact hole. 본 발명의 실시 예에 따른 커패시터는 액티브 층, 상기 액티브 층 위에 형성된 게이트 절연층, 상기 게이트 절연층 위에 형성된 게이트 전극, 상기 게이트 전극위에 형성된 층간 절연막, 및 상기 층간 절연막 위에 형성되어 있고 적어도 하나의 컨택홀을 통해 상기 액티브 층에 연결되어 있는 제1 전극을 포함한다.
Author JIN GUANG HAI
CHOI JAE BEOM
CHO JAE SEOL
PARK SE HUN
Author_xml – fullname: JIN GUANG HAI
– fullname: PARK SE HUN
– fullname: CHOI JAE BEOM
– fullname: CHO JAE SEOL
BookMark eNrjYmDJy89L5WTgdHYMcHT2DPEP4mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8d5BRgZGBgYGxiZmFhaOxsSpAgBgXR4i
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
DocumentTitleAlternate 커패시터
ExternalDocumentID KR20200034688A
GroupedDBID EVB
ID FETCH-epo_espacenet_KR20200034688A3
IEDL.DBID EVB
IngestDate Fri Aug 23 06:56:26 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
Korean
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_KR20200034688A3
Notes Application Number: KR20200033947
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200331&DB=EPODOC&CC=KR&NR=20200034688A
ParticipantIDs epo_espacenet_KR20200034688A
PublicationCentury 2000
PublicationDate 20200331
PublicationDateYYYYMMDD 2020-03-31
PublicationDate_xml – month: 03
  year: 2020
  text: 20200331
  day: 31
PublicationDecade 2020
PublicationYear 2020
RelatedCompanies SAMSUNG DISPLAY CO., LTD
RelatedCompanies_xml – name: SAMSUNG DISPLAY CO., LTD
Score 3.2376096
Snippet According to an embodiment of the present invention, provided is a capacitor which comprises: an active layer; a gate insulating layer formed on the active...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title CAPACITOR
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200331&DB=EPODOC&locale=&CC=KR&NR=20200034688A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMUpKNDOxTDLUTTIwAXZQLFJMdS3Mkk10E9NSUoBpJMksJQU0DunrZ-YRauIVYRrBxJAD2wsDPie0HHw4IjBHJQPzewm4vC5ADGK5gNdWFusnZQKF8u3dQmxd1KC9Y9BKK2Ch4uJk6xrg7-LvrObsbOsdpOYXBJEzMDYxs7BwZGZgBTWkQSftu4Y5gfalFCBXKm6CDGwBQPPySoQYmLLzhRk4nWF3rwkzcPhCp7yBTGjuKxYBqnAMcHT2DPEPEmVQdnMNcfbQBZoZD_dCvHcQsgOMxRhYgJ37VAkGBcO0RNNEYJPJwBwYWIlGBpbmSRapycBiJAXYMjEzTpJkkMFnkhR-aWkGLhAXsodOhoGlpKg0VRZYiZYkyYH9DgDmFXGx
link.rule.ids 230,309,786,891,25594,76903
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMUpKNDOxTDLUTTIwAXZQLFJMdS3Mkk10E9NSUoBpJMksJQU0DunrZ-YRauIVYRrBxJAD2wsDPie0HHw4IjBHJQPzewm4vC5ADGK5gNdWFusnZQKF8u3dQmxd1KC9Y9BKK2Ch4uJk6xrg7-LvrObsbOsdpOYXBJEzMDYxs7BwZGZgNQd2CsGdpTAn0L6UAuRKxU2QgS0AaF5eiRADU3a-MAOnM-zuNWEGDl_olDeQCc19xSJAFY4Bjs6eIf5BogzKbq4hzh66QDPj4V6I9w5CdoCxGAMLsHOfKsGgYJiWaJoIbDIZmAMDK9HIwNI8ySI1GViMpABbJmbGSZIMMvhMksIvLc_A6RHi6xPv4-nnLc3ABZKC7KeTYWApKSpNlQVWqCVJcuBwAABb03Sb
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=CAPACITOR&rft.inventor=JIN+GUANG+HAI&rft.inventor=PARK+SE+HUN&rft.inventor=CHOI+JAE+BEOM&rft.inventor=CHO+JAE+SEOL&rft.date=2020-03-31&rft.externalDBID=A&rft.externalDocID=KR20200034688A