SUBSTRATE PROCESSING APPARATUS METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND RECORDING MEDIUM

• Main Authors: YAHATA TAKASHI, HIROCHI YUKITOMO
• Format: Patent
• Language: English; Korean
• Published: 24.03.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention provides a technique, which can control the amount of radical supplied with respect to a diameter direction of a substrate in an apparatus for supplying plasma to process the substrate. The present invention comprises: a processing chamber processing the substrate; a substrate support part supporting the substrate in the processing chamber; a plurality of reaction gas supply holes formed on a wall of the processing chamber facing a substrate loading surface of the substrate support part; a reaction gas supply pipe fixed to the processing chamber and communicating with each of the reaction gas supply holes; a plurality of reaction gas supply parts having a plasma generating part provided on an upstream portion of the reaction gas supply pipe; and a plasma control part connected to the plasma generating part and individually controlling a plurality of plasma generating parts. 본 발명은, 플라스마를 공급해서 처리하는 장치에 있어서, 기판의 직경 방향에 대하여 공급되는 라디칼의 양을 제어 가능한 기술을 제공하는 것을 목적으로 한다. 기판을 처리하는 처리실과, 상기 처리실에서 기판을 지지하는 기판 지지부와, 상기 기판 지지부의 기판 적재면과 대향하는 상기 처리실의 벽에 형성된 복수의 반응 가스 공급 구멍과, 상기 처리실에 고정되고, 상기 반응 가스 공급 구멍 각각에 연통하는 반응 가스 공급관과, 상기 반응 가스 공급관의 상류에 마련된 플라스마 생성부를 갖는 복수의 반응 가스 공급부와, 상기 플라스마 생성부에 접속되어, 복수의 상기 플라스마 생성부를 개별로 제어하는 플라스마 제어부를 갖는다.