FREQUENCY CONTROL OF SPURIOUS SHEAR HORIZONTAL MODE BY ADDING HIGH VELOCITY LAYER IN A LITHIUM NIOBATE FILTER
An electronic device comprises: first and second surface acoustic wave (SAW) resonators, wherein each of the first and second SAW resonators includes interleaved interdigital transducer (IDT) electrodes, the first and second SAW resonators are formed on the same piezoelectric substrate, and the firs...
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Main Author | |
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Format | Patent |
Language | English Korean |
Published |
23.12.2019
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Subjects | |
Online Access | Get full text |
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Summary: | An electronic device comprises: first and second surface acoustic wave (SAW) resonators, wherein each of the first and second SAW resonators includes interleaved interdigital transducer (IDT) electrodes, the first and second SAW resonators are formed on the same piezoelectric substrate, and the first SAW resonator includes IDT electrodes having finger pitches different from finger pitches of IDT electrodes of the second SAW resonator; a dielectric material layer disposed on the IDT electrodes of the first and second SAW resonators; and a high velocity layer disposed in the dielectric material layer disposed on the IDT electrodes of the first SAW resonator, wherein the second SAW resonator does not have a high velocity layer disposed in the dielectric material layer disposed on the IDT electrodes.
전자 디바이스는 제1 표면 탄성파(surface acoustic wave)(SAW) 공진기 및 제2 SAW 공진기 - 이들 각각은 인터리빙된 인터디지털 트랜스듀서(interdigital transducer)(IDT) 전극들을 포함하고, 제1 및 제2 SAW 공진기들은 동일 압전 기판 상에 형성되고, 제1 SAW 공진기는 제2 SAW 공진기의 IDT 전극들과 상이한 핑거 피치를 갖는 IDT 전극들을 가짐 -; 제1 및 제2 SAW 공진기들의 IDT 전극들 상에 배치된 유전체 재료 층; 및 제1 SAW 공진기의 IDT 전극들 상에 배치된 유전체 재료 층 내에 배치된 고속 층 - 제2 SAW 공진기는 IDT 전극들 상에 배치된 유전체 재료 층 내에 배치된 고속 층이 없음 - 을 포함한다. |
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Bibliography: | Application Number: KR20190069965 |