Manufacturing method ofnitrogen-doped porous graphene

According to the present invention, a method for producing N-doped porous graphene nitride includes: a step of preparing aqueous solution containing graphene oxide (GO); a step of etching the graphene oxide with an etchant and producing porous graphene oxide having at least one pore formed therein;...

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Bibliographic Details
Main Authors SHIN GWANG HYUK, CHOI SUNG YOOL, LEE JAE SEUNG, CHOI JIN SEONG, BANG GYEONG SOOK
Format Patent
LanguageEnglish
Korean
Published 22.11.2019
Subjects
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Summary:According to the present invention, a method for producing N-doped porous graphene nitride includes: a step of preparing aqueous solution containing graphene oxide (GO); a step of etching the graphene oxide with an etchant and producing porous graphene oxide having at least one pore formed therein; and a step of adding a nitrogen-containing precursor to the porous graphene oxide so as to form a porous pyridine-N-doped graphene structure by a reduction reaction and a nitrogen doping (N-dopping). The etching is carried out for 1 hour to 2 hours 30 minutes. The present invention is able to effectively produce a porous structure. 다공성 질화 그래핀(N-doped porous graphene)의 제조 방법에 있어서, 산화 그래핀(graphene　oxide; GO)을 함유하는 수용액을 준비하는 단계; 상기 산화 그래핀을 에천트(etchant)로 에칭하여 적어도 하나의 포어가 형성되는 다공성 산화 그래핀(porous graphene oxide)을 제조하는 단계; 및 상기 다공성 산화 그래핀에 질소 함유 전구체를 첨가하여 환원 반응 및 질소 도핑함으로써(N-doping) 다공성 피리딘-질화 그래핀(Pyridinic-N-doped graphene) 구조가 형성되도록 하는 단계를 포함하며, 상기 에칭은 1시간 내지 2시간 30분 동안 수행된다.
Bibliography:Application Number: KR20180054628