막 형성방법 및 권취식 막 형성장치

• Main Authors: HONMA HIROAKI, TAKAHASHI HIROHISA, HASEGAWA MASAKI
• Format: Patent
• Language: Korean
• Published: 16.07.2019
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

가요성 기판의 변형을 억제하기 위해서, 본 발명에 1형태에 따른 막 형성방법은 진공용기 내의 수분압이 목적값 이하가 될 때까지 상기 진공용기가 배기되는 예비처리를 포함한다. 상기 진공용기 내에 배치된 제1 크롬 타깃과 제2 크롬 타깃 사이에 교류전압을 인가하는 것에 의해 플라즈마가 발생한다. 상기 제1 크롬 타깃 및 상기 제2 크롬 타깃에 대향하도록 배치된 가요성 기판의 막 형성면에 크롬층이 형성된다. In order to suppress deformation of a flexible substrate, a deposition method according to an embodiment of the present invention includes pre-treatment of exhausting a vacuum chamber until a water partial pressure inside the vacuum chamber becomes equal to or lower than a desired value. Plasma is generated by applying an alternate current (AC) voltage between a first chromium target and a second chromium target, the first chromium target and the second chromium target being arranged inside the vacuum chamber. A chromium layer is formed on a deposition surface of a flexible substrate arranged facing the first chromium target and the second chromium target.