CONTACT FORMATION METHOD AND RELATED STRUCTURE

• Main Authors: WANG MEI YUN, CHAO KUO YI, WANG CHAO HSUN, HSUEH WANG JUNG
• Format: Patent
• Language: English; Korean
• Published: 10.06.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Disclosed are a method for forming a via-first metal gate contact and a structure thereof. The method includes a step of depositing a first dielectric layer over a substrate having a gate structure with a metal gate layer. An opening is formed within the first dielectric layer to expose a portion of...