PLASMA PROCESSING APPARATUS

According to the present invention, discharge, generated in a high-frequency antenna, is suppressed. A plasma processing device (10) comprises a chamber (11), a gas source (44), an antenna (54), and a plurality of holding portions (55). The chamber (11) has a space therein, and processes a semicondu...

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Bibliographic Details
Main Author ITOU SATOSHI
Format Patent
LanguageEnglish
Korean
Published 09.05.2019
Subjects
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