PLASMA PROCESSING APPARATUS
According to the present invention, discharge, generated in a high-frequency antenna, is suppressed. A plasma processing device (10) comprises a chamber (11), a gas source (44), an antenna (54), and a plurality of holding portions (55). The chamber (11) has a space therein, and processes a semicondu...
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Main Author | |
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Format | Patent |
Language | English Korean |
Published |
09.05.2019
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Subjects | |
Online Access | Get full text |
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