SYNTHESIS OF SILICON-CARBON COMPOSITE IN A GAS PHASE REACTOR

The present invention provides a method for producing a silicon-SiC composite powder, comprising the following steps of: providing a gas stream I containing SiH_4, Si_2H_6 and/or Si_3H_8 and at least one hydrocarbon selected from ethene and/or acetylene and a coaxial gas stream II containing hydroge...

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Main Authors KOVACEVIC JASMINA, LANG JUERGEN ERWIN, SCHULZ CHRISTOF, WIGGERS HARTMUT, ORTHNER HANS
Format Patent
LanguageEnglish
Korean
Published 24.12.2018
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Abstract The present invention provides a method for producing a silicon-SiC composite powder, comprising the following steps of: providing a gas stream I containing SiH_4, Si_2H_6 and/or Si_3H_8 and at least one hydrocarbon selected from ethene and/or acetylene and a coaxial gas stream II containing hydrogen to a high-temperature wall reactor, wherein the coaxial gas stream II forms a jacket stream with respect to the gas stream I; and making at least the gas stream I react at a temperature of 900 to 1100°C, subsequently cooling a reaction mixture or allowing the reaction mixture to be cooled at an outlet of the high-temperature wall reactor, and separating a pulverulent reaction product from a gas phase material. 본 발명은, SiH, SiH및/또는 SiH및 에텐 및/또는 아세틸렌으로부터 선택된 적어도 하나의 탄화수소를 함유하는 기체 스트림 I, 및 수소를 함유하는 동축 기체 스트림 II를 고온 벽 반응기에 공급하며, 여기서 기체 스트림 II는 기체 스트림 I에 대해 재킷 스트림을 형성하는 것이고, 적어도 기체 스트림 I을 900℃ 내지 1100℃의 온도에서 반응시키고, 후속적으로 고온 벽 반응기의 출구에서, 반응 혼합물을 냉각시키거나 또는 냉각되도록 두고, 분말상 반응 생성물을 기체상 재료로부터 분리하는, 규소-SiC 복합재 분말을 제조하는 방법을 제공한다.
AbstractList The present invention provides a method for producing a silicon-SiC composite powder, comprising the following steps of: providing a gas stream I containing SiH_4, Si_2H_6 and/or Si_3H_8 and at least one hydrocarbon selected from ethene and/or acetylene and a coaxial gas stream II containing hydrogen to a high-temperature wall reactor, wherein the coaxial gas stream II forms a jacket stream with respect to the gas stream I; and making at least the gas stream I react at a temperature of 900 to 1100°C, subsequently cooling a reaction mixture or allowing the reaction mixture to be cooled at an outlet of the high-temperature wall reactor, and separating a pulverulent reaction product from a gas phase material. 본 발명은, SiH, SiH및/또는 SiH및 에텐 및/또는 아세틸렌으로부터 선택된 적어도 하나의 탄화수소를 함유하는 기체 스트림 I, 및 수소를 함유하는 동축 기체 스트림 II를 고온 벽 반응기에 공급하며, 여기서 기체 스트림 II는 기체 스트림 I에 대해 재킷 스트림을 형성하는 것이고, 적어도 기체 스트림 I을 900℃ 내지 1100℃의 온도에서 반응시키고, 후속적으로 고온 벽 반응기의 출구에서, 반응 혼합물을 냉각시키거나 또는 냉각되도록 두고, 분말상 반응 생성물을 기체상 재료로부터 분리하는, 규소-SiC 복합재 분말을 제조하는 방법을 제공한다.
Author KOVACEVIC JASMINA
WIGGERS HARTMUT
SCHULZ CHRISTOF
ORTHNER HANS
LANG JUERGEN ERWIN
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DocumentTitleAlternate 기체 상 반응기에서의 규소-탄소 복합재의 합성
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Snippet The present invention provides a method for producing a silicon-SiC composite powder, comprising the following steps of: providing a gas stream I containing...
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SubjectTerms CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
THEIR RELEVANT APPARATUS
TRANSPORTING
Title SYNTHESIS OF SILICON-CARBON COMPOSITE IN A GAS PHASE REACTOR
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